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Showing 1 to 10 of 10 for “"Power diodes"”.

  1. Investigation of MOS-Gated Thyristors and Power Diodes

    … MOS-gated thyristors (MGT) refer to the class of power devices that combine the ease of a MOS gate control with the superior current carrying capability of a thyristor structure for high-power applications. The MOS-controlled thyristor (MCT) is a typical MGT device. A comprehensive investigation …

    vt Repository record for Investigation of MOS-Gated Thyristors and Power Diodes (opens in a new tab)

  2. Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes

    … figure of merit (BFOM) of unipolar Ga2O3 power devices, i.e., they potentially can achieve a smaller specific on-resistance (RON,SP) as compared to the Si, SiC, and GaN devices with the same breakdown voltage (BV). The above prospects make Ga2O3 devices the promising candidates for …

    vt Repository record for Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes (opens in a new tab)

  3. Vertical gallium nitride power devices on bulk native substrates

    Lateral power devices based on AlGaN/GaN hetero-structures have achieved excellent performance in the medium power range applications. However for higher voltage higher current switches, a vertical structure is preferred since its die area does not depend on the breakdown voltage. This thesis …

    mit Repository record for Vertical gallium nitride power devices on bulk native substrates (opens in a new tab)

  4. Evaluation of diode-based non-linear transmission lines as microwave sources in compact pulsed power systems

    … and defense related, for compact, high-power, and solid-state pulsed power sources. Of particular interest are pulsed power sources capable of generating high power microwaves (HPM). Diode-based nonlinear transmission lines (DNLTLs), while meeting the above criteria and widely used for …

    umkc Repository record for Evaluation of diode-based non-linear transmission lines as microwave sources in compact pulsed power systems (opens in a new tab)

  5. Improvements in Inductively Coupled Wireless Power Transfer Through Non-Sinusoidal Excitation and Closed-Loop Operation Using Optical Feedback

    … the performance in inductively coupled wireless power transfer (WPT) systems. The first is non sinusoidal excitation technique. By analysing the characteristics of rectifier diodes, LR time constant, and circuit impedance for nonlinear signals, a triangular pulse input is designed to operate the …

    cambridge Repository record for Improvements in Inductively Coupled Wireless Power Transfer Through Non-Sinusoidal Excitation and Closed-Loop Operation Using Optical Feedback (opens in a new tab)

  6. Switching-Loss Measurement of Current and Advanced Switching Devices for Medium-Power Systems

    The ultimate goal for power electronics is to convert one form of raw electrical energy into a usable power source with the lowest amount of loss. A considerable portion of these losses are due to the use of switching devices themselves. Device losses can be apportioned to conduction loss and …

    vt Repository record for Switching-Loss Measurement of Current and Advanced Switching Devices for Medium-Power Systems (opens in a new tab)

  7. Characterization and modeling of silicon and silicon carbide power devices

    Power devices play key roles in the power electronics applications. In order for the power electronics designers to fully utilize the performance advantages of power devices, compact power device models are needed in the circuit simulator (Saber, P-spice, etc.). Therefore, it is very important to …

    vt Repository record for Characterization and modeling of silicon and silicon carbide power devices (opens in a new tab)

  8. Overcoming Longstanding Synthesis Challenges Toward Realizing the Full Device Potential of III-Nitride Semiconductors

    … (InGaN), UV LEDs and lasers (AlGaN), and high-power diodes and transistors (AlGaN). However, many of these applications remain unrealized due to challenges in growing high-quality material by traditional growth techniques like metalorganic chemical vapor deposition (MOCVD) and molecular beam …

    gatech Repository record for Overcoming Longstanding Synthesis Challenges Toward Realizing the Full Device Potential of III-Nitride Semiconductors (opens in a new tab)

  9. Robustness and Stability of Gallium Nitride Transistors in Dynamic Power Switching

    … and the high breakdown field of GaN, GaN power HEMTs enable low specific on-resistance and small capacitance and thus become attractive for high-frequency applications. In addition, most commercial GaN power HEMTs are fabricated on Si substrates up to 8 inches, allowing for a remarkable …

    vt Repository record for Robustness and Stability of Gallium Nitride Transistors in Dynamic Power Switching (opens in a new tab)

  10. Processing and Reliability Assessment of Solder Joint Interconnection for Power Chips

    Circuit assembly and packaging technologies for power electronics have not kept pace with those for digital electronics. Inside those packaged power devices as well as the state-of-the-art power modules, interconnection of power chips is accomplished with wirebonds. Wirebonds in power devices and …

    vt Repository record for Processing and Reliability Assessment of Solder Joint Interconnection for Power Chips (opens in a new tab)