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Showing 1 to 9 of 9 for “"Power Electronics Packaging"”.
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Design and Analyses of a Dimple Array Interconnect Technique for Power Electronics Packaging
… thermal and mechanical characteristics for power electronics applications. In the DAI structure, electrical connections onto the devices are achieved by solder bumps formed between the silicon device and arrays of dimples stamped on a metal sheet flex. This research first presents the design …
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Design, Analysis and Experimental Verification of a Mechanically Compliant Interface for Fabricating Reliable, Double-Side Cooled, High Temperature, Sintered Silver Interconnected Power Modules
This research developed a double-side power electronics packaging scheme for high temperature applications exemplified by 1200 V, 150 A silicon devices. The power modules, based on both quarter and half-bridge topologies, were assembled using sintered silver device attachment rather than …
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Development of Cu particle sintering as die attach solution for high temperature electronics applications
… as Die Attach Solution for High Temperature Electronics Applications”, submitted to TU Berlin, investigates innovative copper (Cu) sintering techniques for die-attach applications in high-temperature electronics, particularly for wide bandgap semiconductors like silicon carbide (SiC). The …
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Processing and Reliability Assessment of Solder Joint Interconnection for Power Chips
Circuit assembly and packaging technologies for power electronics have not kept pace with those for digital electronics. Inside those packaged power devices as well as the state-of-the-art power modules, interconnection of power chips is accomplished with wirebonds. Wirebonds in power devices and …
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Optimization of Bonding Geometry for a Planar Power Module to Minimize Thermal Impedance and Thermo-Mechanical Stress
This study focuses on development a planar power module with low thermal impedance and thermo-mechanical stress for high density integration of power electronics systems. With the development semiconductor technology, the heat flux generated in power device keeps increasing. As a result, more and …
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Processing and Characterization of Device Solder Interconnection and Module Attachment for Power Electronics Modules
… processing of an innovative three-dimensional packaging architecture for power electronics building blocks with soldered device interconnections and subsequent characterization of the module's critical interfaces. A low-cost approach termed metal posts interconnected parallel plate structure …
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Low Pressure and Short-Time Silver-Sintering for Power Modules
… technologies in wide bandgap (WBG) semiconductor power modules due to its excellent thermal conductivity, high temperature stability and mechanical reliability. However, the traditional silver sintering process generally has the problems of long sintering time and high auxiliary pressure, which …
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Thermo-mechanical Analysis of a Custom PCB-DBC Hybrid Package for a (650 V, 150 A) e-GaN HEMT
… potential to improve upon silicon (Si ) based power electronics exhausted, the push for improvement now lies with wide bandgap (WBG) materials like gallium nitride (GaN). With a larger bandgap, higher electron mobility, and higher electrical field strength than Si, GaN high electron mobility …
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Packaging of Enhancement-Mode Gallium Nitride High-Electron-Mobility Transistors for High Power Density Applications
… limits as compared to traditional silicon (Si) power switches. They have the potential to dramatically increase the power density and efficiency of power electronics systems by replacing traditional Si-based switches. However, GaN HEMTs have a faster switching speed compared to their Si-based …