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Showing 1 to 3 of 3 for “"Positive bias stress"”.

  1. Improving the Stability of Organic Field-Effect Transistors

    … operational stability of OFETs under a prolonged bias-stress condition. While much effort has been made to explain ON-state bias-stress instabilities in p-type materials (also known as negative bias stress) and to minimise their effects, not much has been done to address the OFF-state bias-stress

    cambridge Repository record for Improving the Stability of Organic Field-Effect Transistors (opens in a new tab)

  2. Quantitative Extraction of Bias Stress Parameters in Thin Film Transistors

    … of TFTs is their inherent instability under bias stress. The two leading semiconducting TFT materials for displays, hydrogenated amorphous silicon (a-Si:H) and amorphous indium gallium zinc oxide (a-IGZO), both suffer from a positive threshold voltage shift under the application of a positive

    cambridge Repository record for Quantitative Extraction of Bias Stress Parameters in Thin Film Transistors (opens in a new tab)

  3. Influence of SiNx/Si interface states on Si solar cells

    … when it was subjected to a constant voltage stress (CVS) of +10V at room temperature. The interface trap density (D_{it}) across the SiN:H/n^+-Si interface increased from 6.3 x 10^9 to 7.5 x 10^9 cm^{-2} eV^{-1} after a 500-second stress whereas the n^+/p junction diode remained unaffected by …

    njit Repository record for Influence of SiNx/Si interface states on Si solar cells (opens in a new tab)