Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 5 of 5 for “"Porous GaN"”.
-
Porous Gallium Nitride Generated by Electroless Etching: Morphology, Optical Properties, and Sensing Applications
… several possible applications for porous GaN have been explored. Currently, because there is not a route for the growth of bulk GaN, GaN films must be grown heteroepitaxially. Substrates for GaN growth are not ideal, and introduce strain and defects. Porous GaN has been studied as …
-
Tomographic reconstruction and sub-surface imaging of porous nitride semiconductors
… methods for the structural characterisation of porous nitride semiconductors and apply those methods to further our understanding of these materials. I investigated nanostructured nitrides through porous GaN distributed Bragg reflectors (DBRs), highly-reflective and wavelength-selective mirrors …
-
Unconventional structured semiconductors and their applications in optoelectronics and photovoltaics
… discussed within this thesis: gallium nitride (GaN) and silicon (Si). A novel Pt-assisted electroless etching technique is used to produce porous GaN (PGaN), which is of particular interest for optoelectronics due to its large direct bandgap (3.4 eV). PGaN is also promising for use as a …
-
Porosity in Nitride Semiconductors
… form in a subsurface doped layer, below a non-porous non-intentionally doped capping layer. It is found that this is enabled by nanopipes formed at dislocations, which allow the electrolyte to reach the doped layer with minimal damage to the capping layer. Large birefringence of 0.14 has been …
-
Microscopy of porous nitride materials for long wavelength light emitting diodes
… issues that persist in long-wavelength InGaN micro-LEDs, a porosified InGaN superlattice (SL) template obtained by electrochemical etching has been adopted as a pseudo-substrate for the overgrowth of InGaN multiple quantum wells (MQWs). Partial strain relaxation with respect to the GaN …