Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 5 of 5 for “"Porosification"”.
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Microscopy and Spectroscopy of Materials for Blue Single Photon Sources
… was thus performed to ascertain the effect of porosification on the emission properties. This study provides the first evidence of a working quantum porous device in the GaN system, and reports single photon emission with a g$^{(2)}$(0) value of 0.126 $\pm \space$ 0.003 through optimisation of …
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Microscopy of porous nitride materials for long wavelength light emitting diodes
… has been achieved in the InGaN SL template via porosification, and this strain relaxation also results in relaxation of the overgrown InGaN MQWs. The porosity of the SL and the density of small V-pits in the MQWs are found to increase with the etching voltage, which together contribute to a …
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Realization of a 3D gradient index medium in porous silicon
… or SiO2) and void. During its electrochemical porosification, the material’s refractive index is defined by modulating the current density along the etch direction to change the porosity in either periodic or continuous fashion, making PSi an excellent materials platform for a variety of …
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Tomographic reconstruction and sub-surface imaging of porous nitride semiconductors
… highly Si-doped GaN layers whilst minimising porosification in notionally non-porous layers and preventing layer collapse. These findings showed that the defect-mediated etching process initially developed for GaN/sapphire also applies to the burgeoning low-cost, mass-market GaN-on-Si platform …
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Croissance de Ge/Si et investigation de la contrainte thermique dans un substrat virtuel à base de nano-cavités
L’intégration des matériaux III-V sur silicium (Si), est une voie prometteuse de développement des composants optoélectroniques III-V à hautes performances et à faible coût. Cependant les différences entre les propriétés intrinsèques des matériaux III-V et le Si (paramètre de maille, différence de …