Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 20 for “"Poly-Si"”.
-
On variability and reliability of poly-Si thin-film transistors
<p>In contrast to conventional bulk-silicon technology, polysilicon (poly-Si) thin-film transistors (TFTs) can be implanted in flexible substrate and can have low process temperature. These attributes make poly-Si TFT technology more attractive for new applications, such as flexible displays, …
-
Development of poly-Si/SiOx passivating contacts for advanced Si photovoltaics
… temperatures from humanity's greenhouse gas emissions makes it apparent that any future energy sources must be clean and renewable. Of the commonly known renewable energy sources: solar, wind, geothermal, and hydroelectric, the Sun provides by far the largest amount of power to the Earth daily at …
-
Development and Characterization of Inkjet-Printed Poly-Si Passivating Contacts for Silicon Solar Cells
… leads the way among renewable energy options, as silicon_based solar cells dominating the market. A key advancement in this domain is the implementation of polycrystalline silicon (poly_Si) passivating contacts, which consist of a doped poly_Si layer and an ultra_thin SiOx layer. This structure …
-
Development and Characterization of Inkjet-Printed Poly-Si Passivating Contacts for Silicon Solar Cells
… leads the way among renewable energy options, as silicon_based solar cells dominating the market. A key advancement in this domain is the implementation of polycrystalline silicon (poly_Si) passivating contacts, which consist of a doped poly_Si layer and an ultra_thin SiOx layer. This structure …
-
Poly-Si films on ZnO:Al coated glass prepared by the aliminium-induced layer exchange process
Die Herstellung von polykristallinen Silizium-Schichten (poly-Si) auf mit transparenten, leitfähigen Oxiden (TCO – transparent conductive oxide) beschichteten Glassubstraten eröffnet neue Möglichkeiten für die Entwicklung von Solarzellen. Diese Arbeit behandelt das Wachstum von poly-Si mit großen …
-
Development of High-performance Flexible Poly-Si Thin Film Transistors and GaAs PIN Photodiode for Advanced X-ray Imaging
… techniques are widely adopted for medical diagnosis and industrial inspections. However, the existing flat panel detectors fail to meet the challenges posed by large-area and curved surface imaging. They are also inadequate for low radiation dose and high spatial resolution applications such as …
-
Contact resistance study on polycrystalline silicon thin-film solar cells on glass
… to have the potential to compete with fossil fuels in the electricity market due to their low cost per peak Watt. The Thin-Film Group at the University of New South Wales (UNSW) is engaged in developing polycrystalline silicon (poly-Si) thin-film solar cells on glass using e-beam …
-
Polycrystalline Silicon TFTs for Large Area Electronic Application
… focuses on low and high voltage Thin Film Transistors (TFTs) for large area flat panel displays and the related physical phenomena. All TFT samples in this work were fabricated using a low temperature, glass compatible poly-Si technology. Extensive numerical simulation and experimental work has …
-
Post-crystallisation treatment and characterisation of polycrystalline silicon thin-film solar cells on glass
Polycrystalline silicon on glass is a possible thin-film material for photovoltaic applications. This thesis performs a detailed experimental investigation of the impacts of two post-crystallisation process steps (rapid thermal annealing and hydrogenation) on the electrical properties of poly-Si on …
-
Kinetics modeling and 3-dimensional simulation of surface roughness during plasma etching
… etching processes is crucial as critical dimension, line-edge roughening, and other artifacts affect device performance and process yields. A profile simulator is necessary to predictively model the etching processes as well as roughness transfer and artifact evolution. The development of …
-
Controlling Activation Energy to Wafers and Walls in Plasma Processing Reactors for Microelectronics Fabrication
… challenge. The use of low-pressure, high-density discharges results in increasing buildup of etch products in the plasma reactor resulting in increased interactions of etch products with wafer and non-wafer surfaces, alike. Consequences of such interactions have been investigated for Ar/Cl2 …
-
Ferroelectric Thin Films for High Density Non-volatile Memories
… random access memories (FRAM) are considered as future memories due to high speed, low cost, low power, excellent radiation hardness, nonvolatility, and good compatibility with the existing integrated circuit (IC) technology. The non-volatile FRAM devices are divided into two …
-
Characterization of Mechanical Properties at the Micro/Nano Scale: Stiction Failure of MEMS, High-Frequency Michelson Interferometry and Carbon NanoFibers
Different forces scale differently with decreasing length scales. Van der Waals and surface tension are generally ignored at the macro scale, but can become dominant at the micro and nano scales. This fact, combined with the considerable compliance and large surface areas of micro and nano devices, …
-
Photovoltaic modeling and grain boundary recombination in poly-silicon
… current, open circuit voltage and energy conversion efficiency of the cells as a function of doping concentration, junction depth, minority carrier surface recombination velocity and diffusion length are discussed. This model simplifies the analysis of the solar cell, and the calculated results …
-
Characterization and modeling of low-frequency noise in Hf-based high -kappa dielectrics for future cmos applications
… Metal Oxide Semiconductor Field Effect Transistors for sub-45 nm technology nodes. Gate oxides of hafnium seem to be the nearest and best alternative for silicon dioxide, when material, thermal and structural properties are considered. Usage of poly-Si as a gate electrode material degrades …
-
Synthesis and Characterization of Ferroelectric (1-x)SrBi2Ta2O9-xBi3TaTiO9 thin films for Non-volatile memory Applications
… fabricated by modified metalorganic solution deposition technique showed much improved properties compared to SrBi2Ta2O9: a leading candidate material for memory applications. A pyrochlore free crystalline phase was obtained at a low annealing temperature of 600 oC and grain size was found to be …
-
Metal-assisted chemical etching of semiconductor nanostructures for electronic applications
Metal-assisted Chemical Etching (MacEtch) is a robust and versatile top-down etching process which has the capability of overcoming the limits of conventional wet and dry etching. The advantage of producing anisotropic high aspect ratio micro- and nanostructures with the absence of ion induced …
-
A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
… nodes and beyond to replace conventional SiO2 or oxynitrides since it possesses a dielectric constant of 22 – 25, a large band gap of 5.6 eV with sufficient band offsets of larger than 1.5 eV, and is thermally stable in contact with silicon and metal gates. However, HfO2 is vulnerable to …
-
Suspended Gate Silicon Nanodot Memory
… memory market has been driven by Flash memory since its invention more than three decades ago. Today, this non-volatile memory is used in a wide variety of devices and systems from pen drives, mp3 players to cars, planes and satellites. However,the conventional floating gate memory technology …
-
CONTROL OF CAVITATION USING DISSOLVED CARBON DIOXIDE FOR DAMAGE-FREE MEGASONIC CLEANING OF WAFERS
… of contaminants particles from wafer surfaces using sound-irradiated cleaning fluids, has been traditionally used in the semiconductor industry for cleaning of wafers. Recently however, advancing technology and miniaturization has made wafer features increasingly susceptible to damage by …