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Showing 1 to 20 of 58 for “"Plasma-enhanced chemical vapor deposition"”.

  1. Polymeric nitrogen by plasma enhanced chemical vapor deposition

    … describes the first detailed study of a plasma-enhanced chemical vapor deposition (PECVD) approach to the synthesis of polymeric nitrogen. PECVD provides non-equilibrium conditions known to produce high pressure-temperature phases. Molecular nitrogen mixed with hydrogen and argon is used …

    njit Repository record for Polymeric nitrogen by plasma enhanced chemical vapor deposition (opens in a new tab)

  2. Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition

    … linewidth technology. The films were prepared by plasma enhanced chemical vapor deposition (PECVD) using gas precursors of tetrafluoromethane as the source of active species and disilane (5 % by volume in helium) as both an active species source and a reducing agent to control the ratio of …

    lsu-thes Repository record for Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition (opens in a new tab)

  3. Plasma-enhanced chemical vapor deposition of hydrogenated silicon carbide films from novel precursors

    Made available in DSpace on 2011-05-07T12:36:59Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9210972.pdf: 12369824 bytes, checksum: fd525d929ff7e6afc7ee9c5de5cd2d57 (MD5) Previous issue date: 1991

    uiuc Repository record for Plasma-enhanced chemical vapor deposition of hydrogenated silicon carbide films from novel precursors (opens in a new tab)

  4. Particle generation in a chemical vapor deposition/plasma-enhanced chemical vapor deposition interlayer dielectric tool

    … the layer. In this study, particle generation, deposition, and adhesion mechanisms are reviewed. In particular, four important sources of interlayer dielectric particle contamination were investigated: the cleanroom environment, improper wafer handling, the backside of the wafer, and microarcing …

    mit Repository record for Particle generation in a chemical vapor deposition/plasma-enhanced chemical vapor deposition interlayer dielectric tool (opens in a new tab)

  5. Radiation response and optical characterization of carbon based thin-films prepared by saddle field plasma enhanced chemical vapor deposition

    … study, the direct current (DC) saddle field Plasma Enhanced Chemical Vapor Deposition (PECVD) method was used to prepare a set of nano-crystalline diamond samples. The relation between the deposition pressure, the gases mixing ratios and the resultant film characteristics were studied. The …

    uoit Repository record for Radiation response and optical characterization of carbon based thin-films prepared by saddle field plasma enhanced chemical vapor deposition (opens in a new tab)

  6. Optical Transitions in Amorphous Semiconductors

    … formalism is applied to the specific case of plasma enhanced chemical vapor deposition deposited hydrogenated amorphous silicon, this being the most widely used amorphous semiconductor at present. It is found that the mobility gap value suggested by Jackson et al. [Physical Review B, vol. 31, …

    regina Repository record for Optical Transitions in Amorphous Semiconductors (opens in a new tab)

  7. A hybrid hydrodynamic-Monte Carlo simulation of the transport of neutral radicals in low-pressure remote plasma sources

    … pressure electron cyclotron resonance and remote plasma enhanced chemical vapor deposition reactors (milliTorr to hundreds of milliTorr) the mean free path of excited state neutrals can be commensurate with the vessel dimensions. Deposition species may collide with the wall several times before …

    uiuc Repository record for A hybrid hydrodynamic-Monte Carlo simulation of the transport of neutral radicals in low-pressure remote plasma sources (opens in a new tab)

  8. Initiated chemical vapor deposition of polymeric thin films : mechanism and applications

    Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness of in situ surface polymer synthesis distinguishes iCVD from conventional …

    mit Repository record for Initiated chemical vapor deposition of polymeric thin films : mechanism and applications (opens in a new tab)

  9. Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics

    Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and octamethylcyclotetrasiloxane precursors were used, with oxygen and hydrogen peroxides …

    mit Repository record for Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics (opens in a new tab)

  10. Chemical vapor deposition of polymeric films

    … high environmental stability. In this project, chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) of carbon films with PPN structure using PTCDA as precursor were carried out under different conditions. There is only limited information in literature on the …

    njit Repository record for Chemical vapor deposition of polymeric films (opens in a new tab)

  11. The integration of InP /InGaAsP ridge waveguide structures with dielectric waveguides on silicon

    … dioxide cladding (n = 1.45) were deposited via plasma-enhanced chemical vapor deposition (PECVD). The integrated InP/InGaAsP structures were fabricated using an existing novel technique for preparing very thin (on the order of 5 pm thick) substrate free rectangular structures (approximately 145 …

    mit Repository record for The integration of InP /InGaAsP ridge waveguide structures with dielectric waveguides on silicon (opens in a new tab)

  12. Stability Investigation of Silicon Nanowire Solar Cells

    … been provided for investigation purposes. The RF plasma-enhanced chemical vapor deposition has been used at different temperatures to deposit silicon nanostructures which may be used for the solar cell active region. The metal-insulator-semiconductor active region efficiency has been evaluated …

    de-montfort Repository record for Stability Investigation of Silicon Nanowire Solar Cells (opens in a new tab)

  13. Chemical vapor deposition thin films as biopassivation coatings and directly patternable dielectrics

    Organosilicon thin films deposited by pulsed plasma-enhanced chemical vapor deposition (PPECVD) and hot-filament chemical vapor deposition (HFCVD) were investigated as potential biopassivation coatings for neural probes. It was found that organosilicon films from identical precursors differ in …

    mit Repository record for Chemical vapor deposition thin films as biopassivation coatings and directly patternable dielectrics (opens in a new tab)

  14. Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films

    … comprehensive study of the parameter space for a plasma enhanced chemical vapor deposition technique used to produce a-Si:H is performed. This enables the control of stress within the deposited film, from compressive to tensile; the mechanical limits of the material resulting in buckling and …

    mit Repository record for Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films (opens in a new tab)

  15. Origins and implications of intrinsic stress in hydrogenated amorphous silicon thin films

    … to be understood about the relationship between deposition conditions and the resulting structural, optical, and bulk properties of the material. In this work we investigate these correlations for a-Si:H films created using plasma enhanced chemical vapor deposition (PECVD), focusing on the …

    mit Repository record for Origins and implications of intrinsic stress in hydrogenated amorphous silicon thin films (opens in a new tab)

  16. GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing

    … prepared using a two-step process; i) remote plasma-assisted oxidation (RPAO) to form a superficially interfacial oxide (~0.6 nm) and ii) remote plasma enhanced chemical vapor deposition (RPECVD) to deposit the oxide film. The same approach has been applied to the GaN-SiO2 system. After a 300 …

    ncsu Repository record for GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing (opens in a new tab)

  17. Microfluidic Electro-osmotic Flow Pumps

    … pump designs. To better understand the EOF on plasma enhanced chemical vapor deposition (PECVD) silicon dioxide, the zeta potential was investigated. PECVD oxide is amorphous and less dense than thermal silicon dioxide, which slightly changes the zeta potential. Zeta potentials were found for …

    byu Repository record for Microfluidic Electro-osmotic Flow Pumps (opens in a new tab)

  18. Origami-inspired nanofabrication utilizing physical and magnetic properties of in situ grown carbon nanotubes

    … the vertically-aligned variety grown through a plasma enhanced chemical vapor deposition (PECVD)-based process, are highly versatile nanostructures that can be used in a variety of nanomanufacturing applications. However, process and material compatibility issues have prevented the nanotubes …

    mit Repository record for Origami-inspired nanofabrication utilizing physical and magnetic properties of in situ grown carbon nanotubes (opens in a new tab)

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