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Showing 1 to 7 of 7 for “"Plasma-assisted molecular beam epitaxy (PAMBE)"”.
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Investigation of Ohmic Contacts for Gallium Nitride-Based Power Electronic Devices Using Molecular Beam Epitaxy
… distribution of dopants while employing SAG by plasma assisted molecular beam epitaxy (PAMBE). The work specifically involved thin film growth, film characterization, device fabrication and device characterization. To develop the SAG technique and study the effect of etchants on single crystal …
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A Critical Study of Gallium Nitride-Based Digital Technology
… in the growth of n-GaN and p-GaN films by plasma-assisted molecular beam epitaxy (PAMBE) were discussed. The p-GaN films were grown in Ga-rich regime in order to obtain excellent surface morphology as well as high doping concentration. For the fabrication of BGJFETs, two-step etching was …
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Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy
… tools. High-quality GaN films grown by plasma-assisted molecular beam epitaxy (PAMBE) are used for the fabrication of GaN-based field-effect transistor (FET) devices such as metal semiconductor FET (MESFET) and high electron mobility transistor (HEMT). In order to investigate the …
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
… as, ion-implantation and inductively-coupled plasma reactive-ion etching (ICP-RIE) etching, introduce lattice damage and defects, causing large leakage current components. Second, inefficient edge termination (ET) designs are incapable of reaching ideal parallel-plane breakdown voltage. This …
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Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices
… incorporation into the crystal is achieved via plasma-assisted molecular beam epitaxy (PAMBE) at low growth substrate temperatures < 400 °C, but damage to the crystal from the plasma is observed in the form of elevated unintentional background electron concentrations and a textured surface …
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Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy
… a comprehensive study of the application of the PAMBE-SAG technique to fabrication of high-power GaN-based switching HEMTs. First, a detailed study of the efficacy of SAG was conducted by comparing it with ion-implantation, a popular technique for improving Ohmic contacts. A consistent …
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Development of high-performance GaN-based power transistors
… transistors. First, selective area growth by plasma-assisted molecular beam epitaxy, a technology developed by our group for Ohmic contact improvement, is utilized to fabricate large-periphery AlGaN / GaN high electron mobility transistors (HEMTs) for high current operation. A novel Ti / Al …