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Showing 1 to 4 of 4 for “"Plasma-Induced Damage"”.

  1. Plasma induced damage to Si and SiGe devices and materials

    This thesis studied the plasma-induced damage to Si and strained Si_{1-x}Ge_x, and the resulting change in device characteristics. The energetic particles (ions, electrons and photons) in plasma reactor present a potentially hostile environment for processing VLSI devices. An inductively coupled …

    njit Repository record for Plasma induced damage to Si and SiGe devices and materials (opens in a new tab)

  2. Study and analysis of surface charge collection and emission spectrum of plasma ashing process

    … Kelvin Probe for changes in parameters during plasma ashing. In this report, it is covered on the plasma characteristics and performance using the optical emission spectroscopy (OES) measurement, the study on how processing condition change can impact the total surface charge collection and …

    uthm Repository record for Study and analysis of surface charge collection and emission spectrum of plasma ashing process (opens in a new tab)

  3. On the Impact and Growth of Plasma-enhanced Atomic Layer Deposition High- Dielectrics on 2D Crystals

    … for the field. </p><p>In this work, the use of plasma-enhanced atomic layer deposition (PEALD) was studied for its ability to enable the nucleation and growth of ultrathin, high-k dielectrics onto various 2D crystal surfaces. It was discovered that the PEALD process can provide significant …

    duke Repository record for On the Impact and Growth of Plasma-enhanced Atomic Layer Deposition High- Dielectrics on 2D Crystals (opens in a new tab)

  4. Procédés de gravure à faible endommagement des surfaces : application à la gravure SiN sur AlGaN/GaN pour les transistors à haute mobilité électronique

    … et d’optimiser des procédés de gravure plasma de la couche cap SiN et des procédés humides post-gravure permettant de préserver l’intégrité de la couche AlGaN. Dans cette étude, deux approches de gravure du SiN ont été évaluées : 1) l’approche traditionnelle utilisant des plasmas fluorés …

    sherbrooke Repository record for Procédés de gravure à faible endommagement des surfaces : application à la gravure SiN sur AlGaN/GaN pour les transistors à haute mobilité électronique (opens in a new tab)