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Showing 1 to 20 of 83 for “"Plasma Etching"”.
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Surface Reaction Mechanisms in Plasma Etching Processes
Surface reactions occurring in fluorocarbon plasmas also influence plasma properties by consuming or generating plasma fluxes. Of particular interest is the effect that surfaces have on CF2 densities, as CF2 is a precursor for polymer formation. These processes were investigated with the integrated …
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Laser-enhanced plasma etching of semiconductor materials
In this work, laser exposure was coupled with plasma etch processes for local etch rate enhancement, and under some conditions, etch activation. Materials were tested which are most-frequently used in semiconductor devices – namely Si, SiO2, and Cu. A 100 Hz, 7 ns pulse width Q-switched Nd:YAG …
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Multivariate endpoint detection of plasma etching processes
In plasma etching process it is critical to know when the film being etched has cleared to the underlying film, i.e. to detect endpoint, in order to achieve the desired device performance in the resulting integrated circuit. The most highly utilized sensor technology for determining endpoint has …
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Pattern dependencies in the plasma etching of polysilicon
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1994.
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Non-perfluorocompound chemistries for plasma etching of dielectrics
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.
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Reaction and Transport of Multiple Species During Plasma Etching
… of transport and reaction of multiple species in plasma reactors was analyzed in order to determine the effect of operating conditions and design variables upon the etch rate distribution and throughput. Epoxy and photoresist films on closely-spaced silicon wafers were etched by reactive species …
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Multiscale modeling of chemical vapor deposition and plasma etching
… is of considerable practical interest, as most etching and CVD processes are run at low pressures ~ 1 torr or less. Under these conditions, the continuum diffusion models used to describe flow and transport in a typical reactor will fail below scales of a few hundred microns, and thus are not …
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A study of plasma etching for use on active metals
… of this thesis to investigate the utility of a plasma etching process in the removal of the active metal. A decision tree for the selection of a suitable etchant gas was developed and experiments were conducted to validate the process. Magnesium coated glass slides were etched with chlorine, …
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Feature profile evolution during the high density plasma etching of polysilicon
… manufacturing of modem integrated circuits - the plasma etching of thin polysilicon films used to form the metaloxide- semiconductor transistor gate. The etching of very small features (-0.25 jim) in the -2500 A thick films, performed at low operating pressures (-10 mTorr), must be accompanied …
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A fundamental study of feature evolution during high density plasma etching
Thesis (M.Eng. and S.B.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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Characterization and modeling of pattern dependencies and time evolution in plasma etching
… evolution of the etch rate in Deep Reactive Ion Etching (DRIE) is presented. DRIE is a key process for pattern formation in semiconductor fabrication. Non-uniformities are caused due to microloading and aspect ratio dependencies. The etch rate varies over time and lateral etch consumes some of …
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Kinetics modeling and 3-dimensional simulation of surface roughness during plasma etching
The control of feature profiles in directional plasma etching processes is crucial as critical dimension, line-edge roughening, and other artifacts affect device performance and process yields. A profile simulator is necessary to predictively model the etching processes as well as roughness …
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Real-time analysis and control of plasma etching via full wafer interferometry
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 1996.
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Material transport and reaction effects in surface typography evolution during plasma etching
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1995.
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High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices
We also demonstrated the fabrication of recessed 0.15 mum gate-length AlGaN/GaN HEMTs using ICP-RIE on sapphire substrate. These devices exhibited high DC and RF performance. The drain current density as high as 1.31 A/mm, a peak transconductance of 401 mS/mm, an fT of 107 GHz and an f max of 148 …
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Modeling of the plasma etching of polysilicon with chloro- and bromo-trifluoromethane discharges
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1986.
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Origin, evolution, and control of sidewall line edge roughness transfer during plasma etching
… challenging. Finally, an inductively-coupled plasma beam source was used to conduct a preliminary investigation into roughening of polysilicon in an HBr plasma beam. The initial polysilicon topography was shown to seed striation formation at glancing ion incident angles due to scattering and …
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3-dimensional modeling and simulation of surface and sidewall roughening during plasma etching
… the surface roughness and LER formation during plasma etching process is thus necessary to optimize the IC manufacturing process and prevent device failure. To meet this challenge, a 3-D Monte Carlo simulator was developed to model the roughening of a surface as well as follow the macroscopic …
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Variation reduction in plasma etching via run-to-run process control and endpoint detection
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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