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Showing 1 to 12 of 12 for “"Pinning effect"”.
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Effect of equalisation time and temperatures on microstructures of simulated directly and conventionally charged V - microalloyed steels
… V-microalloyed steels, MnS provides the main pinning effect but does not have a sufficient ability to prevent the austenite grains from growing during the equalisation. Because of the slow precipitation, AIN only precipitates at the longest equalisation time and is the main compound which has …
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Effects of AG on structural and magnetic properties of FePt thin films
… coercivity enhancement was associated with the pinning effect of Ag and improvement in ordering.In FePt/Ag/FePt sequential deposition, Ag diffused throughout the FePt film with predominant segregation to the film surface. As a result, media noise was reduced and SNR was improved.Ag could be used …
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In situ transmission electron microscopy ion irradiations of model iron-chromium alloys
… components of a nuclear reactor. We examine the effects of temperature and chromium concentration on the defect evolution and segregation behavior in the early stages of damage. In situ irradiations are conducted in a transmission electron microscope (TEM) at 300°C and 450°C with 150keV iron ions …
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The effect of non-metallic particles on as-cast austenitic structure of low carbon steel
The effect of second-phase particles and cooling rate on the as-cast austenite grain size of peritectic plain-carbon steel has been examined. Remelting tests followed by continuous cooling and helium quenching were performed on a Gleeble 1500 Thermo mechanical Simulator. Two low alloy types of …
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Band Engineering of Advanced Materials for Semiconductor Devices
… downscaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) continues, the short-channel effects (SCEs) and contact resistance severely degrade device performance. It is crucial to understand the physics at various interfacial regions of MOSFETs to provide guidance for overcoming …
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Dipole Contact Engineering for Field-Effect Transistors Based on Two-Dimensional Materials
… are promising candidates for future field-effect transistors. TMDs can enable aggressive lateral and vertical device scaling, and they can add computing power density and new memory and sensing capabilities via 3D integration. However, several key challenges remain before 2D-channel …
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Structure and dynamics of magnetic domain walls in multi-sublattice magnetic oxides
… experimental evidence. We investigated the DW depinning dynamics in Pt/BiYIG thin film, presenting a phase diagram of this pinning event, which proves the crucial role of minimizing the pinning effect in achieving fast DW velocity. In EuIG(110) thin film with strong in-plane anisotropy, we …
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Quantitative Analysis of Microstructural Evolution in Polycrystalline Metal Matrix with Embedded Second Phase Particle
… the motion of the grain boundaries is impeded by pinning effects exerted by these particles. The ability of the moving boundaries to pass through particles of distinct morphologies is different, with the simulation results showing a big influence of particle alignment and the aspect ratio on the …
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Grain boundaries and creep deformation mechanisms in a high performance nickel-based superalloy
… study aims to progress the understanding of the effect of grain boundaries in relation to the content of minor additions such as C, B and Zr. This was achieved by creep testing at conditions representative of service in gas turbine engines and extensive use of electron microscopy. Alloy 12-1 …
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Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory
… devices like metal oxide semiconductor field effect transistors (MOSFETs) and resistive random-access memories (ReRAMs). The continuous scaling of CMOS has brought the Si MOSFET to its physical technology limit and the replacement of Si channel with Ge channel is required. However, the …
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A multiscale study on the origins of the Portevin-Le Chatelier effect in polycrystalline nickel-based superalloys
… testing, termed the Portevin-Le Chatelier (PLC) effect. This includes nickel-based superalloys, between approximately 200 °C and 600 °C. The PLC effect is widely attributed to Dynamic Strain Ageing (DSA), referring to dislocation pinning effects caused by the diffusion of solute to dislocations, …
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Germanium on silicon heteroepitaxy for high efficiency photovoltaic devices
… density (TDD) that does not adversely effect carrier lifetimes in epitaxially deposited III-V layers that inherit the Ge film's TDD. Assuming recombination at dislocations is carrier diffusion limited, an acceptable limit for most applications is below 10⁶ cm-² due to typical minority …