Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 20 of 67 for “"Physical vapor deposition"”.

  1. Ionized Physical Vapor Deposition of Aluminum Oxide

    Made available in DSpace on 2017-07-06T18:55:08Z (GMT). No. of bitstreams: 3 Li_Ning_MS.pdf: 51415629 bytes, checksum: c29c8d58534efcdd114931c9fc6f3d8d (MD5) Li_Ning_MS_ABS.pdf: 619486 bytes, checksum: 41ecf59db6588595b2e30243525fce36 (MD5) license.txt: 4813 bytes, checksum: …

    uiuc Repository record for Ionized Physical Vapor Deposition of Aluminum Oxide (opens in a new tab)

  2. Diagnostics for ionized physical vapor deposition chambers

    … diagnostics are needed to accurately predict the deposition profile of features on the wafer. Traditionally, the incident ion fluxes are considered to be perfectly normal to the wafer plane due to the electric field of the plasma sheath. However from simulation results the ion flux from a …

    uiuc Repository record for Diagnostics for ionized physical vapor deposition chambers (opens in a new tab)

  3. Secondary Plasma Sources for Ionized Physical Vapor Deposition

    … fractions to the substrate of 51 +/- 10% with a deposition rate of 847 +/- 42 A/min. are found. Without the antenna, the ionization fraction is 30 +/- 6% and the deposition rate is 815 +/- 41 A/min. This remote source is envisioned to sit six or more around a sputtering chamber, which can help …

    uiuc Repository record for Secondary Plasma Sources for Ionized Physical Vapor Deposition (opens in a new tab)

  4. Temperature Changes in Thin Films During Growth by Physical Vapor Deposition

    Made available in DSpace on 2015-05-12T22:36:05Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7121249.PDF: 3623717 bytes, checksum: defd3f27f23661a57f9e5a0d428ef639 (MD5) Previous issue date: 1971

    uiuc Repository record for Temperature Changes in Thin Films During Growth by Physical Vapor Deposition (opens in a new tab)

  5. Modeling Plasma Equipment and Feature Profile in Ionized Metal Physical Vapor Deposition

    A three-dimensional HPEM is employed to examine the consequences of asymmetric excitation due to the transmission line effects and irregular sputter tracks on species densities and fluxes. It was found that for typical conditions for Al IMPVD the metal species have improved symmetry due to charge …

    uiuc Repository record for Modeling Plasma Equipment and Feature Profile in Ionized Metal Physical Vapor Deposition (opens in a new tab)

  6. Mathematical modeling of the melt pool during a physical vapor deposition process

    Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 1998.

    mit Repository record for Mathematical modeling of the melt pool during a physical vapor deposition process (opens in a new tab)

  7. Electron beam lithography of molecular glass resist films prepared by physical vapor deposition

    … sizes. In this thesis electron beam lithography, physical vapor deposition as alternative resist preparation technique and the materials development for this film preparation technique are covered. In the first chapter of this thesis the characterization of the utilized electron beam exposure tool …

    bayreuth Repository record for Electron beam lithography of molecular glass resist films prepared by physical vapor deposition (opens in a new tab)

  8. Chemically Enhanced Physical Vapor Deposition (Cepvd) of Tantalum Nitride-Based Films for Diffusion Barrier Layers Used in ULSI Devices

    … model is established allowing the attachment of physical understanding and CEPVD experimental phenomena. The model stems from the knowledge of reactive sputtering and PECVD processes as well as the acquired CEPVD experiment results. It correlates the processing parameters with the target and film …

    uiuc Repository record for Chemically Enhanced Physical Vapor Deposition (Cepvd) of Tantalum Nitride-Based Films for Diffusion Barrier Layers Used in ULSI Devices (opens in a new tab)

  9. Surface Reaction Mechanisms for Plasma Processing of Semiconductors

    … polymer from trenches following etching and the deposition of a continuous barrier layer are critical processes for integration PS as ILDs. To investigate these issues, a reaction mechanism for plasma stripping of residual fluorocarbon polymer using oxygen-based chemistries has been developed and …

    uiuc Repository record for Surface Reaction Mechanisms for Plasma Processing of Semiconductors (opens in a new tab)

  10. Microstructural studies of vapor-deposited nickel/ceramic composites

    … of model composites produced by plasma-assisted physical vapor deposition (ion plating) and consisting of thin ($<$1 micrometer) metallic films on a ceramic substrate. The two major aspects of this research are: (1) the investigation of the effects of ion bombardment on the nucleation behavior …

    uiuc Repository record for Microstructural studies of vapor-deposited nickel/ceramic composites (opens in a new tab)

  11. Nanocrystalline copper-tantalum composites

    This research investigated the physical metallurgy, high temperatures coarsening, and processing/structure relationships for Cu$\sb{\rm 1-x}$Ta$\sb{\rm x}$ (x = $\sim$5 to 20 atomic percent) alloys. These metastable alloys were produced using a plasma assisted physical vapor deposition (PAPVD) …

    uiuc Repository record for Nanocrystalline copper-tantalum composites (opens in a new tab)

  12. Electrochemical Investigation of Thin Nickel, Copper and Silver Films Interfaced with Yttria-Stabilized Zirconia

    … in the lab and films deposited onto them using evaporative physical vapor deposition (PVD). The critical thickness of copper, silver and nickel thin films were foundusing in-situ resistance measurements. Following this, 50 and 100 nm copper and nickel films were studied using solid electrolyte …

    ottawa-retro Repository record for Electrochemical Investigation of Thin Nickel, Copper and Silver Films Interfaced with Yttria-Stabilized Zirconia (opens in a new tab)

  13. Design, fabrication, and characterization of a compact magnetron sputtering system for micro/nano fabrication

    … design, development and testing of a sputtering physical vapor deposition tool, a critical tool in the 1" Fab line of tools.

    mit Repository record for Design, fabrication, and characterization of a compact magnetron sputtering system for micro/nano fabrication (opens in a new tab)

  14. Transport in Low Pressure Plasma Reactors for Materials Processing

    "Ionized metal physical vapor deposition (IMPVD) at pressures of a few mTorr is being increasingly used to deposit diffusion barriers and Cu seed layers into high aspect ratio trenches. Understanding plasma-substrate interactions will be critical to designing the next generation processes as the …

    uiuc Repository record for Transport in Low Pressure Plasma Reactors for Materials Processing (opens in a new tab)

  15. Copper metallization with an electron cyclotron resonance

    … cyclotron resonance" plasma source, used for physical vapor deposition of copper into sub-micron features, was studied to determine whether parameters, such as gas atom density, electron density and temperature, surface bias, and copper ionization fraction at the deposition surface, influenced …

    mit Repository record for Copper metallization with an electron cyclotron resonance (opens in a new tab)

  16. Dynamical perspective of stability in glasses

    … plays a central role in determining both their physical properties and their technological performance. This Thesis investigates how glass stability influences microscopic dynamics over a wide range of timescales, from picosecond vibrations to structural relaxations lasting hundreds of seconds. …

    trento Repository record for Dynamical perspective of stability in glasses (opens in a new tab)

  17. Kinetics of Buffer-Layer-Assisted Nanostructure Growth

    … for technology to build ever-smaller devices. In physical vapor deposition, however, thermodynamics poses stringent rules as to what material can self-assemble into three-dimensional structures on the surface of choice. On the other hand, deposition of pre-formed atomic clusters on a substrate …

    uiuc Repository record for Kinetics of Buffer-Layer-Assisted Nanostructure Growth (opens in a new tab)

  18. Flux profile modelling using numerical methods

    Molecular beam Epitaxy (MBE) is a physical vapor deposition system, used to grow semiconductor layers (epilayers). In order to increase the economics of MBE, the industry has increased the size and number of wafers processed in one stage. This lead to, non-uniformity in thickness of material grown. …

    unlv Repository record for Flux profile modelling using numerical methods (opens in a new tab)

Page 1 of 4