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Showing 1 to 5 of 5 for “"Photoelectrochemical Etching"”.

  1. Modeling of Charge Carrier Transport in Photoetching of Gallium Arsenide

    The process of wet photoelectrochemical etching of GaAs was investigated with a numerical model that calculated the potential, electron, and hole distributions in a selectively illuminated semiconductor. The transport mechanisms associated with the etching process were studied. The model used the …

    uiuc Repository record for Modeling of Charge Carrier Transport in Photoetching of Gallium Arsenide (opens in a new tab)

  2. Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors

    … processing techniques such as isolation etching, low-resistance drain/source ohmic contacts, and Schottky gate formation. These efforts along with related processing issues will be discussed. Devices were then fabricated on epitaxial layers grown on sapphire substrates and on n-type, …

    uiuc Repository record for Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors (opens in a new tab)

  3. Development and optimisation of supercritical fluid deposition of semiconductor films

    … fabrication of macroporous silicon templates by photoelectrochemical etching is also discussed. Pores with diameters of between 60 nm and 2 µm were fabricated, having aspect ratios of up to 100:1. Ge was successfully deposited into macropores etched into these crystalline silicon templates with …

    soton Repository record for Development and optimisation of supercritical fluid deposition of semiconductor films (opens in a new tab)

  4. Multi-Microscopy Characterisation of III-Nitride Devices and Materials

    … EL. The deleterious effects of defects on the photoelectrochemical etching of cavities were also studied. We performed TEM analysis of an edge-defect contained in unetched material on the underside of a microdisk using FIB/SEM sample preparation methods. The roughness and morphology of …

    cambridge Repository record for Multi-Microscopy Characterisation of III-Nitride Devices and Materials (opens in a new tab)