Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 100 for “"Photodiodes"”.
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EXCESS NOISE STUDIES ON AVALANCHE PHOTODIODES
… constructed. Commercially available avalanche photodiodes (APDs) could be illuminated over the wavelengths 420 nm to 2 gm and the noise current spectrum from 10 Hz to 10 kHz could be measured by a phase sensitive detection system. The noise above normal shot noise in germanium, silicon, and …
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Fabrication and simulation of CMOS-compatible photodiodes
CMOS-compatible photodiodes are becoming increasinging important devices to study because of their application in combined electronic-photonic systems. They are already used as inexpensive optical transceivers in fiber optic telecommunications systems and they have the potential to be integrated in …
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Electrical characterization of gold-doped Hg0.8Cd0.2Te photodiodes
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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Flaw-limited transport in germanium-on-silicon photodiodes
… on silicon substrates has enabled a new class of photodiodes that can be integrated with traditional silicon electronics. Previous workers using lowthroughput growth techniques have demonstrated device functionality sufficient for many applications. To enable commercial integration, however, …
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Fabrication and characterization of germanium-on-silicon photodiodes
… thesis is to understand the physics of Ge-on-Si photodiodes, especially the dark current. Low-pressure chemical vapor deposition was used to deposit thick (1 - 2 [mu]m) films on silicon substrates either selectively in oxide windows or in blanket films. Photodetectors were fabricated in both …
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Laser beam induced current studies of Hg1-xCdxTe photodiodes
… and optical based measurements of p-n junction photodiodes. The technique is non-destructive and employs a focused low-power laser beam that is scanned across the semiconductor surface, between two shorted ohmic contacts located at remote positions on either side of the scanned area. The LBIC …
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3D Camera Based on Gain-Modulated CMOS Avalanche Photodiodes
… of range camera exploiting linear-mode avalanche photodiodes as in-pixel demodulating detectors. Due to photocurrent gain modulation, avalanche photodiodes can combine optical sensing and light signal demodulation in a single device. The main advantage of the avalanche photodiode implementation is …
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Optical modulation of harmonics in PIN photodiodes for antenna applications
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2025-12-01
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Communication-Theoretic Foundations for Optical Receivers Using Dynamically Biased Avalanche Photodiodes
… to high sensitivity) to reduce cost. Avalanche photodiodes (APDs) are commonly used photodetectors in many high-speed optical receivers due to their internal optoelectronic gain, which allows the photogenerated current to dominate the thermal noise without the need for optical pre-amplification …
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Unipolar barrier strained layer superlattice infrared photodiodes : physics and barrier engineering
… LH2 and HH2. The performance of InAs/GaSb T2SL photodiodes was improved by barrier engineered devices. Device architecture, called pBiBn, was proposed in this work, and was realized for MWIR and LWIR detectors. It uses unipolar electron and hole current blocking layers to reduce the various …
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The Security of Self-Differencing Avalanche Photodiodes for Quantum Key Distribution
… are the single-photon detectors, often avalanche photodiodes (APDs), as they are directly exposed to the optical channel. Whilst measurement-device-independent QKD removes detector vulnerability from the system, secure key rates with this technique can be much lower than point-to-point links. As …
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Performance characterization of functional fiber detectors: scintillating fibers with embedded photodiodes
… concept involves the integration of avalanche photodiodes within scintillating fibers, thereby engendering a detector that is not only lightweight and flexible, but also remarkably affordable. The foundation of this methodology revolves around the utilization of a convergent thermal draw …
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Single-photon avalanche photodiodes for quantum communication applications in the near-infrared
… undertaken on InGaAs-InP single-photon avalanche photodiodes (SPADs) intended for use in near-infrared (NIR) applications, such as light detection and ranging (LIDAR) and quantum key distribution (QKD) systems. Within the work, the effect of the lateral dimensions of the detector’s anode on the …
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Low pressure epitaxial growth, fabrication and characterizion of Ge-on-Si photodiodes
… systems onto an electronic chip, near infrared photodiodes utilizing novel materials such as germanium must be monolithically integrated onto the Si CMOS platform. Such near-infrared photodiodes can be utilized for a plethora of applications such as optoelectronic ADCs, optical interconnects, …
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Liquid Phase Epitaxial Indium-Gallium-Arsenide - Phosphide Avalanche Photodiodes for Near-Infrared Detection
… and characterization of InGaAsP/InP avalanche photodiodes for near-infrared detection is described in detail. Particular material requirements which must be satisfied for these devices are considered and the special techniques involved in the use of liquid phase epitaxy which have been …
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Modeling and engineering impact ionization in avalanche photodiodes for near and mid infrared applications
Avalanche photodiodes (APDs) are the preferred photodetector in many applications in which low light levels need to be detected. The reason why APDs are important in such applications is due to their internal gain, which improves the APD's sensitivity. Compared to receivers based on PIN …
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Development of high-performance front-illumination III-N avalanche photodiodes by metalorganic chemical vapor deposition
Gallium nitride (GaN) avalanche photodiodes (APDs) having large direct band-gap energy of ~3.5 eV at 300K can exhibit a high sensitivity in the ultraviolet (UV). They are appropriate candidates for many applications because of their capability of operation in the near-UV and visible-blind spectral …
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Theory and Experiment of Antimony-Based Type-Ii Superlattice Infrared Photodetectors
… modeling the QE of InAs/GaSb superlattice photodiodes, we ensure that the depletion region in InAs/GaSb superlattice photodiodes is effective in collecting the photoexcited carriers. Understanding the dark current mechanisms of InAs/GaSb superlattice photodiodes is another important task …
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Post assembly process development for Monolithic OptoPill integration on silicon CMOS
… and technologies, in which InGaAs/InP P-i-N photodiodes were integrated as long wavelength photodetectors with an optical clock receiver circuit. Fabrication procedures, challenges experienced, and results accomplished are presented for each process step including the formation of alloyed and …
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