Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"Phase change memory (PCM)"”.
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Ultra-low power phase change memory with carbon nanotube interconnects
Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) as interconnects to induce phase change in ultra small regions of Ge2Sb2Te5 (GST), we are able to …
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The Multi-tiered Future of Storage: Understanding Cost and Performance Trade-offs in Modern Storage Systems
… landscape of storage hardware and software has changed considerably. Storage hardware has diversified from hard disk drives and solid state drives to include persistent memory (PMEM) devices such as phase change memory (PCM) and Flash-backed DRAM. On the software side, the increasing adoption of …
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New PCM based FPGA architecture and graphene memory cell design
… a new look-up table (LUT) implementation using phase change memory (PCM) cells. Utilizing the fact that PCM cells store data using resistance values, unlike traditional memory cells, the memory cell we propose can store up to 2 bits per cell. This is achieved by controlling the 1T2R PCM cell …
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Nanometer-scale temperature measurements of phase change memory and carbon nanomaterials
… heat generation in new graphene and phase change memory (PCM) devices, which have potential to improve performance and energy consumption of future electronics. Nanometer-scale thermometry of chemical vapor deposition (CVD) grown graphene measured the heat generation at graphene …
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Low Energy Order-To-Disorder Transition Pathways In Phase-Change Nanowires
Phase change memory (PCM) can reversibly transform between the amorphous and crystalline phase within nanoseconds, making it a promising candidate for non-volatile memory (NVM) applications. The conventional method to realize the crystal−amorphous transformation in PCM is to heat the material above …
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Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
… endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the end of its scaling capability. The RRAM technology comprises two subcategories: 1) the …
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Latency Tradeoffs in Distributed Storage Access
… technologies such as Flash, 3D-crosspoint, phase change memory (PCM), etc. coupled with highly efficient access protocols such as NVMe are capable of ingesting and reading data at rates that challenge even the leading edge networking technologies such as 100Gb/sec Ethernet. At the same time, …