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Showing 1 to 20 of 24 for “"Phase change memory"”.
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Domain-specific accelerators using optically-addressed phase change memory
… and energy efficiency, largely due to the memory wall problem and the limitations of complementary metal-oxide-semiconductor (CMOS) technology scaling. As a result, electronic devices are increasingly unable to meet the growing computational demands, necessitating the exploration of …
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Transient phase change effect in phase change memory devices
Phase change random access memory (PCRAM) is a leading contender for next generation nonvolatile memory. The phase change mechanism from high resistance amorphous phase to low resistance crystalline phase in nano-timescale is the most important characteristic of these materials. However, full …
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Transient Phase-Change Effect in Phase-Change Memory Devices
Phase-change random access memory (PCRAM) is one of the next-generation memories with the most potential due to its many good characteristics, such as nonvolatility, high endurance and long data retention. PCRAM has the potential to replace flash memory, which has limited durability and speed. …
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Scaling study of phase change memory using carbon nanotube electrodes
Demands for data storage and computer memory are growing exponentially. It is thus essential to find a new scalable, energy-efficient memory technology. We have been investigating the smallest and most energy-efficient data storage technology, based on phase change materials (PCMs) rather than …
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Ultra-low power phase change memory with carbon nanotube interconnects
Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) as interconnects to induce phase change in ultra small regions of Ge2Sb2Te5 (GST), we are able to …
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Nanometer-scale temperature measurements of phase change memory and carbon nanomaterials
… heat generation in new graphene and phase change memory (PCM) devices, which have potential to improve performance and energy consumption of future electronics. Nanometer-scale thermometry of chemical vapor deposition (CVD) grown graphene measured the heat generation at graphene …
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First and Second-Principles Atomistic Modelling of Ge-Sb-Te Phase-Change Memory Materials
Phase-change memory materials are semiconductors with a fast and re- versible transition between a resistive amorphous phase and a conductive crystalline phase. A sufficiently large contrast in electrical resistivity can be used to read and write bits of information, as encoded in the struc- ture …
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Characterization of the Effects of Thickness and Composition in Current Induced Phase Change in Sb₂Se₃ and Sb₂S₃
Phase-change memory is a promising new field for the world of memory storage, but current limitations such as slower switching speeds than current forms memory like random-access memory (RAM) and flash memory, have made the implementation of phase-change memory infeasible. Antimony triselenide …
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The Multi-tiered Future of Storage: Understanding Cost and Performance Trade-offs in Modern Storage Systems
… landscape of storage hardware and software has changed considerably. Storage hardware has diversified from hard disk drives and solid state drives to include persistent memory (PMEM) devices such as phase change memory (PCM) and Flash-backed DRAM. On the software side, the increasing adoption of …
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Phase-Engineered Field-Effect Transistors Based on Two-Dimensional Transition Metal Dichalcogenides
… can exist in either a semiconducting or metallic phase. Semiconducting TMDC based field-effect transistors (FETs) are considered promising candidates for post-Si electronics owing to their ultra-thin body enabling ultimate scalability. However, the large contact resistance at the metal/TMDC …
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Storage system design for non-volatile byte-addressable memory using consistent and durable data structures
… to low cost, non-volatile, byte-addressable memory (e.g., Phase Change Memory and Memristor), the growth of “big data”, and the subsequent emergence of frameworks such as memcached and NoSQL systems require us to rethink the design of storage systems. Today, the predominant method available …
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New PCM based FPGA architecture and graphene memory cell design
… a new look-up table (LUT) implementation using phase change memory (PCM) cells. Utilizing the fact that PCM cells store data using resistance values, unlike traditional memory cells, the memory cell we propose can store up to 2 bits per cell. This is achieved by controlling the 1T2R PCM cell …
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Crystal-Amorphous Transformation Via Defect-Templating in Phase-Change Materials
Phase-change materials (PCM) such as GeTe and Ge-Sb-Te alloys are potential candidates for non-volatile memory applications, because they can reversibly and rapidly transform between a crystalline phase and an amorphous phase with medium-range order. Traditionally, crystal-amorphous transformation …
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Low Energy Order-To-Disorder Transition Pathways In Phase-Change Nanowires
Phase change memory (PCM) can reversibly transform between the amorphous and crystalline phase within nanoseconds, making it a promising candidate for non-volatile memory (NVM) applications. The conventional method to realize the crystal−amorphous transformation in PCM is to heat the material above …
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Melting of 2D van der Waals material systems
Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-10-19 without embargo terms
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A framework for live forensics
… they may taint evidence by leaving footprints in memory. Current uses of live forensics in corporate incident response efforts are limited because the tools used to analyze the system inherently taint the state of disks and memory. As a result, the courts have been reluctant to accept evidence …
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Ab initio Study of Atomic Dynamics and Thermal Properties of Inorganic Clathrates, Chalcogenides and Perovskite Oxides
… Ge-Sb-Te (GST) alloys, are good candidates for phase- change memory devices. Their thermal properties affect device stability and operational speed. Many computer-simulation methods can be used to calculate the thermal properties of GST, but most are expensive computationally. Here, I compared …
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Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
… endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the end of its scaling capability. The RRAM technology comprises two subcategories: 1) the …
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