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Showing 1 to 14 of 14 for “"Parasitic Components"”.

  1. High Power Inverter EMI Characterization and Improvement by Auxiliary Resonant Snubber Inverter

    … dv/dt and di/dt rates interacting with inverter parasitic components. The reduction of parasitic components relies on highly integrated circuit layout and packaging. This is the way to deal with noise path. On the other hand, switching dv/dt and di/dt can be potentially reduced by soft-switching …

    vt Repository record for High Power Inverter EMI Characterization and Improvement by Auxiliary Resonant Snubber Inverter (opens in a new tab)

  2. Analysis and Optimization of the Two-Phase Series Capacitor Buck DC-DC Converter

    … of the regulator’s parameters and only the main parasitic components. Both, an improved derivation of the main design parameters and a novel design methodology of MOSFETs isolated gate driver circuit are proposed and verified. Different high voltage input 2-pscB power density dc-dc converters are …

    arkansas Repository record for Analysis and Optimization of the Two-Phase Series Capacitor Buck DC-DC Converter (opens in a new tab)

  3. A Compact Three-Phase Multi-stage EMI Filter with Compensated Parasitic-Component Effects

    … the propagation path. However, self and mutual parasitic components are known to degrade the EMI filter performance. While parasitic cancellation techniques have been discussed at length in prior literature, most of them have focused mainly on single phase applications. As such this work focuses …

    vt Repository record for A Compact Three-Phase Multi-stage EMI Filter with Compensated Parasitic-Component Effects (opens in a new tab)

  4. Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics

    … performance of GaN HEMTs. To maximize fmax, parasitic components in the device (Ri, R, Rg, Cgd, and go) are carefully minimized and the optimized 60-nm AlGaN/GaN HEMT shows a very high fmax of 300 GHz. The lower-than-expected fT observed in many AlGaN/GaN HEMTs is attributed to a significant …

    mit Repository record for Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics (opens in a new tab)

  5. System Level Modeling of Thermal Transients in PEMFC Systems

    … fuel cell system engineers to properly size components to meet design parameters without compromising efficiency by over-sizing parasitic components. A transient fuel cell system level model is being developed that includes a simplified transient thermal and parasitics model. Model validation …

    vt Repository record for System Level Modeling of Thermal Transients in PEMFC Systems (opens in a new tab)

  6. MOSFET Current Source Gate Drivers and Topologies for High Efficiency and High Frequency Voltage Regulator Modules

    … a Current-Source Driver (CSD). The impact of the parasitic components is investigated. Based on the proposed loss model, a general method to optimize the CSD is presented. With the proposed optimization method, the CSD improves the efficiency from 79.4% using the conventional voltage source driver …

    queens Repository record for MOSFET Current Source Gate Drivers and Topologies for High Efficiency and High Frequency Voltage Regulator Modules (opens in a new tab)

  7. Frequency Domain Conductive Electromagnetic Interference Modeling and Prediction with Parasitics Extraction for Inverters

    … the insightful information about the critical components of the EMI generation and distribution. The study was first applied to a dc/dc chopper circuit by deriving the high frequency equivalent circuit model for differential mode (DM) and common mode (CM) EMIs. The noise source was modeled as …

    vt Repository record for Frequency Domain Conductive Electromagnetic Interference Modeling and Prediction with Parasitics Extraction for Inverters (opens in a new tab)

  8. Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices

    … been explained as well. In order to capture the parasitic ringing in the very fast switching transients, a modeling methodology has also been proposed considering the circuit parasitics, with which a device-package combined simulation can be conducted to reproduce the detailed switching waveforms …

    vt Repository record for Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices (opens in a new tab)

  9. Technology Agnostic Analysis and Design for Improved Performance, Variability, and Reliability in Thin Film Photovoltaics

    … for both intrinsic dark and light currents, and parasitic (shunt) leakage. We establish the universal physics of space-charge-limited shunt conduction in TFPV technologies, and develop physics based compact model for TFPV cells. We examine the statistics of parasitic shunting, and demonstrate its …

    purdue-thes Repository record for Technology Agnostic Analysis and Design for Improved Performance, Variability, and Reliability in Thin Film Photovoltaics (opens in a new tab)

  10. Design of Active Clamp for Fast Transient Voltage Regulator-Down (VRD) Applications

    … VRM will be replaced with VRD because of the parasitic components effect. The specifications requirements for VRD are even more challenging than VRM. With this kind of tight tolerance, high current and fast current slew rate, transient response requirements for VRD design are very challenging, …

    vt Repository record for Design of Active Clamp for Fast Transient Voltage Regulator-Down (VRD) Applications (opens in a new tab)

  11. Self-Oscillating Unified Linearizing Modulator

    … to output overregulation and even damage the components. The control gain is defined as the ratio of output voltage to control signal. The small-signal control gain is defined as differentiating output voltage with respect to control signal. Feedback control helps to make the output trace the …

    vt Repository record for Self-Oscillating Unified Linearizing Modulator (opens in a new tab)

  12. EMI Noise Reduction Techniques for High Frequency Power Converters

    … very good attenuation at high frequency due to parasitics. Shielding technique is very popular in isolated DC-DC converters to reduce CM noise. However, the previous shielding method requires precise control of parasitic capacitance and dv/dt. It is very difficult to achieve good CM noise …

    vt Repository record for EMI Noise Reduction Techniques for High Frequency Power Converters (opens in a new tab)

  13. High Frequency, High Efficiency Two-Stage Approach for Future Microprocessors

    … the reduction is not obvious any more due to the parasitic components along the power delivery path. Following the vision of high bandwidth, the VRs need to operate at much higher frequency than today's practice. Unfortunately, the multiphase buck converter cannot benefit from it due to the low …

    vt Repository record for High Frequency, High Efficiency Two-Stage Approach for Future Microprocessors (opens in a new tab)

  14. Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters

    … switching frequencies to shrink the passive components volume. The power semiconductor devices for high frequency high density power converter applications have been investigated. Firstly, the methodology is developed to evaluate the power semiconductor devices for high power density …

    vt Repository record for Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters (opens in a new tab)