Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 3 of 3 for “"PNPN"”.

  1. Modeling and numerical methods for power electronic devices

    … scalable I-V model for latch-up in non-collinear PNPN devices is adapted from a previous model for collinear SCR devices. The model is applied to 14-nm FinFET test structures. Layout scaling trends for key latch-up metrics, such as holding and trigger voltage, are captured by the model in circuit …

    uiuc Repository record for Modeling and numerical methods for power electronic devices (opens in a new tab)

  2. A method for characterization of single-event latchup technologies as a function of geometric variation

    … and n-channel transistors, there are parasitic PNPN paths that act as cross-coupled bipolar transistors capable of creating low-impedance paths between the power supply rails known as the “latchup” state. Latchup is destructive and requires a power cycle to restore operation. Latchup can be …

    utc Repository record for A method for characterization of single-event latchup technologies as a function of geometric variation (opens in a new tab)

  3. Investigation of the hazards of substrate current injection: transient external latchup and substrate noise coupling

    Substrate current injection is the origin of external latchup and substrate noise coupling. The trigger current for external latchup depends on the duration of the trigger event. A physics-based model is provided to model the effects of aggressor to victim spacing and orientation on transient …

    uiuc Repository record for Investigation of the hazards of substrate current injection: transient external latchup and substrate noise coupling (opens in a new tab)