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Showing 1 to 4 of 4 for “"PECVD-Verfahren"”.

  1. Herstellung und Untersuchung von beidseitig passivierten kristallinen Siliziumsolarzellen

    … in a plasma enhanced chemical vapor deposition (PECVD) batch reactor. With a plasma generation frequency of 440 kHz surface recombination velocities below 70 cm/s on 1 omega cm float zone silicon (FZ-Si) and below 30 cm/s on 6 omega cm Czochralski silicon were obtained. This demonstrates that …

    aachen Repository record for Herstellung und Untersuchung von beidseitig passivierten kristallinen Siliziumsolarzellen (opens in a new tab)

  2. In-situ Raman spectroscopy : a method to study and control the growth of microcrystalline silicon for thin-film solar cells

    … plate plasma enhanced chemical vapor deposition (PECVD) of µc-Si:H. Measurements of the crystalline volume fraction and the temperature of a growing film are carried out. To enable in-situ Raman measurement of central regions of the coated substrate in a PECVD system, optical access under normal …

    aachen Repository record for In-situ Raman spectroscopy : a method to study and control the growth of microcrystalline silicon for thin-film solar cells (opens in a new tab)

  3. Abscheidung und Charakterisierung von PECVD-Aluminiumoxidschichten

    … essentially to cemented carbide. In the PECVD deposition process the ionised and excited gaseous particles are striking the film surface during the growing. By the collisions with ions adsorbed particles receive additional energy which leads to a high mobility and therefore to the change …

    aachen Repository record for Abscheidung und Charakterisierung von PECVD-Aluminiumoxidschichten (opens in a new tab)