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Thermo-mechanical Analysis of a Custom PCB-DBC Hybrid Package for a (650 V, 150 A) e-GaN HEMT

Nicholas, Carl PeterVirginia Tech2023

… efficiency power devices. However, the package designs used for Si cannot be used for GaN HEMTs, requiring novel, chip-scale designs that are optimized for low electrical parasitics and low thermal resistance. Recent Center for Power Electronics (CPES) research culminated in a printed circuit …

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