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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 340 for “"P-type"”.
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Tunneling spectroscopy in p-type silicon
Tunneling in boron doped p-type silicon metal-semiconductor and metal-insulator-semiconductor tunnel junctions has been studied at low temperatures by measuring the derivatives, di/dV and d2i/dV2, of the current-voltage characteristics as functions of applied bias voltage V. The junctions were …
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Cu2O thin films for p-type metal oxide thin film transistors
The rapid progress of n-type metal oxide thin film transistors (TFTs) has motivated research on p-type metal oxide TFTs in order to realise metal oxide-based CMOS circuits which enable low power consumption large-area electronics. Cuprous oxide (Cu2O) has previously been proposed as a suitable …
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Reducing Off-State Current in P-Type Metal Oxide Thin Film Transistors
… which is inferior to CMOS. While NMOS is a type of digital circuit design which utilises only n-type semiconductors, CMOS utilises complementary n-type and p-type transistors to enable low-power and stability. P-type metal-oxide semiconductors have performed poorly in transistor devices and …
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An ultrasonic study of point defects in electron-irradiated P-type silicon
… lattice is Jahn-Teller distorted with e-type (tetragonal or <100> orthorhombic) symmetry.
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Characterization of p-type silicon semiconductor detectors for use in in vivo dosimetry
The response of a p-type diode detector for use in patient dose monitoring in photon and electron fields was evaluated for a number of commonly-encountered clinical parameters. Effects of energy, field size, source-to-surface distance, presence of beam modifiers, beam orientation, and temperature …
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Investigation of doped ZnO by Molecular Beam Epitaxy for n- and p-type Conductivity
… the currently dominant ITO in industries as n-type transparent electrodes and the difficulty in achieving reliable and reproducible p-type ZnO. On the one hand, n-type ZnO heavily doped with Al or Ga (AZO or GZO) is the most promising to replace ITO due to the low cost, abundant material …
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The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric
… of the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine …
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Lead Free CH3NH3SNI3 Perovskite Thin-Film with P-type Semiconducting Nature and Metal-like Conductivity
… spectroscopy (UV-VIS). The distinctive p-type semiconducting nature and metal like conductivity of CH3NH3SnI3 were confirmed by the measurements of electrical and optical properties. Crystal structures and uniform film formation of CH3NH3SnI3 layer were analyzed by XRD and scanning …
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Influence of bulk defects in p-type Czochralski silicon on reliability of high efficiency solar cells
As the energy demand and average temperature of the Earth increase, the need for renewable, alternative energy sources increases dramatically. Climate change has already made permanent changes to the Earth including coral bleaching, population extinction, and decreased water availability. Due to …
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Effects of Electron-Irradiation on P-Type Germanium at Liquid Helium Temperatures Using Ac Hopping Conductivity
Made available in DSpace on 2015-05-12T22:39:06Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7412164.PDF: 5595326 bytes, checksum: 11aedf0b1245045f7dcbd7c2848347b2 (MD5) Previous issue date: 1973
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Effects of electron irradiation on P-type germanium at liquid helium temperatures using AC hopping conductivity
P-type germanium single crystals (8 X 1014 Ga/cm3 and 6 X 1015 Ga/cm3) were irradiated with 1.1 MeV electrons at pUmped liquid helium temperatures and defect production and annealing studied using ac hopping conductivity. Production rates obtained from measurements at 1.5 K and 104 Hz were .6 cm- l …
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Deposition of p-type metal oxide semiconductors for large-area electronic display and solar cell applications
… oxide technologies. However, whilst very good n-type materials have now been developed, there is still an absence of good p-type materials, which are essential to allow development of the inorganic, non-silicon based p-n junctions and CMOS technology, required by the solar cell and display …
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Electrodeposition of Epitaxial Wide Bandgap P-Type Semiconductors and Copper Metal for Energy Conversion and Flexible Electronics
… epitaxial electrodeposition of wide bandgap p-type semiconductors and epitaxial Cu thin films via a self-assembled monolayer for energy conversion and flexible electronics. Paper I introduces the epitaxial electrodeposition of hole conducting CuSCN nanorods onto Au (111) surface, and lift-off …
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Fabrication of Cu2O based homostructure thin film using electrodeposition method
… However, the heterojunction interface between p-type Cu2O to other materials has lower conversion efficiency due to lattice mismatch. Thus, a p-n Cu2O homojunction thin film had been introduced to acquire higher efficiency due to similar interface which can promote less defects between layers. In …
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Metal oxide thin film transistors for CMOS applications
… the development of all-oxide CMOS technology. N-type amorphous indium-silicon-oxide (a-ISO) and p-type tin monoxide (SnO) TFTs were fabricated and studied in detail. Both these oxides are excellent candidates for low-cost, low-power, flexible CMOS technology which is essential to reduce the power …
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Metal impurities in n-type crystalline silicon for photovoltaics : simulation, synchrotron-based characterization, and mitigation
… substitute for the currently dominant p-type multicrystalline silicon (mc-Si) wafer. This thesis explores one class of wafer substitute: n-type silicon. This material is thought to have higher defect tolerance than p-type, but practical mc-Si cell efficiencies have remained lower than in …
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Growth Kinetics of GaN and Effects of Flux Ratio and Growth Temperature on Properties of Undoped and Mg-Doped GaN Films Grown by PAMBE
… is found that the growth conditions to achieve p-type films are closely related to those for undoped films since p-type conductivity is obtained only after a complete compensation of the background carriers. By supplying a high Mg flux, heavily doped p-type GaN films are obtained. The observation …
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Hydrogenation of High Purity Gallium-Arsenide and Liquid Phase Epitaxy Growth of High Purity Indium-Gallium-Arsenide
… of donors and acceptors in high purity n- and p-type GaAs before and after hydrogenation has been investigated by photo-thermal ionization spectroscopy, low temperature photoluminescence, capacitance-voltage and Hall-effect measurements. The concentration of deep levels in these samples was …
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