Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 4 of 4 for “"P-i-N photodetector"”.

  1. Development of high-speed P-i-N photodetector for 50Gb/s optical link in data centers

    Various emerging applications such as high-performance computing (HPC) have been pushing the speed limit of communication. The growing dependence on the optical interconnect in data centers results from its superiority over traditional electrical interconnects to transmit data at high speed over …

    uiuc Repository record for Development of high-speed P-i-N photodetector for 50Gb/s optical link in data centers (opens in a new tab)

  2. Design and modeling of high speed P-i-N photodetector for 50 GB/S optical fiber links

    … links, high speed receiver devices, known as photodetectors, need to be designed properly so as not to present a bottleneck in the performance of optical links. With the aid of microwave modeling, we can characterize the performance of the photodetector and therefore improve the devices. This …

    uiuc Repository record for Design and modeling of high speed P-i-N photodetector for 50 GB/S optical fiber links (opens in a new tab)

  3. Development of InP DHBT for 5G millimeter-wave power amplifier and GaAs photodetector for 50 Gb/s optical link

    … optical transceivers require high-speed photodetector to be paired with high-speed vertical-cavity surface-emitting lasers (VCSELs) for short-range transmission at 850 nm. High-speed photodetector holds the key to higher data rate and lower energy consumption, which can help resolve the …

    uiuc Repository record for Development of InP DHBT for 5G millimeter-wave power amplifier and GaAs photodetector for 50 Gb/s optical link (opens in a new tab)

  4. Fabrication and Characterization of Optoelectronics Devices Based on III-V Materials for Infrared Applications by Molecular Beam Epitaxy

    … monitoring. The novel semiconductor lasers and photodetectors structures and materials investigated in this thesis cover the spectral range from 1.3µm to 12µm. This spectral region includes near-infrared (NIR), mid-infrared (MIR) and long wavelength infrared. This thesis demonstrated infrared …

    columbia-diss Repository record for Fabrication and Characterization of Optoelectronics Devices Based on III-V Materials for Infrared Applications by Molecular Beam Epitaxy (opens in a new tab)