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Showing 1 to 13 of 13 for “"Oxynitrides"”.
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Control of optoelectronic properties via aliovalent disorder in ternary nitrides and oxynitrides
The III-V family of semiconductor compounds have revolutionized optoelectronics. From record-efficiency GaAs solar cells to the GaN-based light-emitting diodes that won the 2014 Nobel Prize, these compounds and alloys have enabled contemporary optoelectronic technology. However, there are …
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Swift heavy-ion irradiation of amorphous silicon dioxide, silicon nitride and silicon oxynitrides composite systems: from ion tracks to nanoparticle shaping
This work provides a systematic study of ion irradiation to tailor the physical and chemical properties of a-SiO2, a-Si3N4 and a-SiOxNy materials with a particular focus on three specific areas: (i) the formation of ion tracks by swift heavy-ion (SHI) irradiation in a-SiO2, a-Si3N4, and a-SiOxNy, …
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Swift heavy-ion irradiation of amorphous silicon dioxide, silicon nitride and silicon oxynitrides composite systems: from ion tracks to nanoparticle shaping
This work provides a systematic study of ion irradiation to tailor the physical and chemical properties of a-SiO2, a-Si3N4 and a-SiOxNy materials with a particular focus on three specific areas: (i) the formation of ion tracks by swift heavy-ion (SHI) irradiation in a-SiO2, a-Si3N4, and a-SiOxNy, …
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THE USE OF PECVD SILICON OXYNITRIDE THIN-FILMS IN MICROELECTRONICS MANUFACTURING
… N₂O and He as reactant gases to deposit silicon oxynitrides by plasma enhanced chemical vapor deposition (PECVD). Comparing with the conventional method using SiH₄ and N₂O as reactant gases, it provides a much wider range of film compositions that can meet many requirements. In addition, lower …
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Electrical characterization of fluorinated and oxynitrided gate-oxides
… by fluorination or oxynitridation. In this work, oxynitrides show convincingly better performance than the fluorinated and the conventional thermally-grown oxides under positive gate bias Fowler-Nordheim tunnelling injection stress. However, under negative gate bias Fowler-Nordheim tunnelling …
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Surface Patterned Ceramics Via Breath Figures Method With Potential Application As Implant Coatings
… the potential application of silicon oxynitrides as bone implant coatings due to the enhanced bioactivity and osteoinductivity of the ceramic. For this reason in the second part of this work we evaluated the potential bioactivity of surface porous silicon oxynitrides in terms of …
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Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications.
… dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to SiO2/SiON gate dielectrics in complementary metal oxide semiconductor (CMOS) devices. Extensive efforts have been taken to understand …
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Multilayer solar selective coatings for high temperature solar applications: from concept to design
… way of simulating nanocomposite materials and oxynitrides is given. Several optical models were evaluated and their appropriateness described in detail. Different SSC stacks were deposited with pulsed filtered cathodic vacuum arc (PFCVA) and non-filtered CVA setup comparing different materials, …
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Multiscale corrosion of zirconium carbide, carbon, and CF/ZRC under extreme environments
… scale reaction products as oxides and ternary oxynitrides. Scale-carbide interfaces included oxynitrides, oxycarbides, carbonitrides, along with carbon precipitates at lower temperatures. Plasma dwell time significantly influenced the local electron density of in-depth zirconium, possibly due …
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Characterization of negative bias temperature instability and lifetime prediction for pMOSFETs
… As the nitrogen concentration in silicon oxynitrides (SiON) increases, the negative bias temperature instability (NBTI) rises and becomes a limiting factor for device lifetime. The NBTI can recover significantly during typical measurement time when using conventional instruments. To …
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
… nodes and beyond to replace conventional SiO2 or oxynitrides since it possesses a dielectric constant of 22 – 25, a large band gap of 5.6 eV with sufficient band offsets of larger than 1.5 eV, and is thermally stable in contact with silicon and metal gates. However, HfO2 is vulnerable to the …
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High thermal expansion phosphorus oxide and oxynitride glasses
… etc.<br />6. Oxynitrides of the above compositions<br />7. Other glass compositions such as PbO containing glasses</p> <p>These glasses were investigated for the purposes of (a) identifying phosphate glasses whose thermal expansion and chemical durability make …
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Synthese von Metallnitrid- und Metalloxinitridnanopartikeln für energierelevante Anwendungen
Ein viel diskutiertes Thema unserer Zeit ist die Zukunft der Energiegewinnung und Speicherung. Dabei nimmt die Nanowissenschaft eine bedeutende Rolle ein; sie führt zu einer Effizienzsteigerung bei der Speicherung und Gewinnung durch bereits bekannte Materialien und durch neue Materialien. In …