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Showing 1 to 6 of 6 for “"Oxide degradation"”.

  1. In-situ impedance characterization for assessing SiC MOSFETs reliability

    … that on-state resistance correlates with gate-oxide degradation, while bond-wire lift-off leads to a measurable increase in package inductance. The circuit is thus capable of simultaneously tracking both degradation modes. Its performance is validated through extensive experimental setups …

    uiuc Repository record for In-situ impedance characterization for assessing SiC MOSFETs reliability (opens in a new tab)

  2. Study of Si/SiO2 interface passivation and SiO2 reliability on deuterium implanted silicon

    … has proven to improve the lifetime of the metal oxide semiconductor devices but this technique is not very effective for a multi-level metal-dielectric structure. This work investigates and optimizes incorporation of deuterium by ion implantation into the silicon substrate before the growth of …

    njit Repository record for Study of Si/SiO2 interface passivation and SiO2 reliability on deuterium implanted silicon (opens in a new tab)

  3. Feasibility of Using Oxide Thickness Measurements for Predicting Crack Growth Rates in P91 Steel Components

    … during service; among the promising ones is the oxide</p> <p>thickness measurement technique. Oxide thickness profiles are taken from crack surfaces of</p> <p>components and used for predicting the rates of crack propagation. This technique is particularly</p> <p>suitable for high temperature …

    arkansas Repository record for Feasibility of Using Oxide Thickness Measurements for Predicting Crack Growth Rates in P91 Steel Components (opens in a new tab)

  4. Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability

    … (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end …

    ucf

  5. Characterization of ultrathin gate dielectrics and multilayer charge injection barriers

    … of the gate dielectric, SiO_2, of a MOSFET. Gate oxides in the ultrathin regime (<35 A) feature a large direct tunneling leakage current. The presence of this leakage current requires a reevaluation of standard characterization techniques as well as a reevaluation of the continued usefulness of …

    njit Repository record for Characterization of ultrathin gate dielectrics and multilayer charge injection barriers (opens in a new tab)

  6. Understanding the Chemistries of Ni-rich Layered Oxide Materials for Applications in Lithium Batteries and Catalysis

    Ni-rich layered oxide materials have gained significant attention due to the ongoing advances and demands in energy storage. The energy revolution continues to catapult the need for improved battery materials, especially for applications in portable electronic devices and electric vehicles. Lithium …

    vt Repository record for Understanding the Chemistries of Ni-rich Layered Oxide Materials for Applications in Lithium Batteries and Catalysis (opens in a new tab)