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Showing 1 to 7 of 7 for “"Oxide Breakdown"”.
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Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability
… (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end …
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Device and Circuit Level EMI Induced Vulnerability: Modeling and Experiments
… integrated circuits (ICs). Metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the ICs may be disrupted under EMI conditions due to transient voltage-current surges, and their internal states may change undesirably. In this work, the vulnerabilities of silicon MOSFETs …
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RF to Millimeter-wave Linear Power Amplifiers in Nanoscale CMOS SOI Technology
… nevertheless, remains challenging due to the low breakdown voltages of CMOS transistors and the loss from on-chip matching networks. These limitations have reduced the design space of CMOS power amplifiers to narrow-band, low linearity metrics often with insufficient gain, output power, and …
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Study Of Nanoscale Cmos Device And Circuit Reliability
… drops down to tens of nanometers and the gate oxide thickness to 1 nm. In the future several years, the deep submicron devices will dominate the semiconductor industry for the high transistor density and the corresponding performance enhancement. For these devices, the reliability issues are …
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Investigation of factors determining charged device model electrostatic discharge reliability of integrated circuits
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2027-08-01
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Reliability and Data Analysis of Wearout Mechanisms for Circuits
… for front-end-of-line time-dependent dielectric breakdown (FEOL TDDB). The separation of wearout mechanisms for circuits will be investigated, and the identification of failure modes for the failure samples will be analyzed. SRAMs and ring oscillators will be used to study the failure modes. The …
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Breakdown Anodization (BDA) for hierarchical structures of titanium oxide
Breakdown Anodization (BDA) of titanium dioxide is a very promising, fast fabrication method to construct micro-scale and nano-scale structures on titanium surfaces. This method uses environmentally friendly electrolytes, such as nitric acid, and can be fabricated within 30 minutes regardless of …