Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 4 of 4 for “"Organometallic vapor phase epitaxy (OMVPE)"”.
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Thermal and photochemical vapor deposition of aluminum nitride and gallium nitride
… device development. Furthermore, the organometallic vapor phase epitaxy (OMVPE) method of growing these materials is discussed in detail in terms of process physics and reactor design and operation.
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An enhancement/depletion process for III-V compound semiconductor heterostructure field-effect transistors and optoelectronic integrated circuits
… Recent advances in the fields of Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), as well as device and circuit fabrication have made large-scale integration (LSI) using III-V compound semiconductor devices possible. This thesis describes an enhancement/depletion (E/D) …
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Characterization of OMVPE-grown GaSb-based epilayers using in situ reflectance and ex situ TEM
… GaSb, GaInAsSb, and AlGaAsSb epilayers grown by organometallic vapor phase epitaxy (OMVPE). These epilayers were principally characterized using in situ spectral reflectance and ex situ transmission electron microscopy (TEM). An in situ spectral (380-1100 nm) reflectance monitoring system was …
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Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control
Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed …