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Showing 1 to 2 of 2 for “"On-State Resistance (RDS(on))"”.

  1. Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress

    Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are having increased applications in high-power and high-frequency conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance …

    uiuc Repository record for Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress (opens in a new tab)

  2. Passive Balancing of Switching Transients between Paralleled SiC MOSFETs

    … paralleled to increase current capability, considering cost effectiveness and manufacturability. Current unbalance among the MOSFETs is a concern as it affects reliability. The two main causes are asymmetrical layout and parameter mismatch. The variation in parameters, unlike circuit or …

    vt Repository record for Passive Balancing of Switching Transients between Paralleled SiC MOSFETs (opens in a new tab)