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Showing 1 to 6 of 6 for “"OMVPE"”.
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Characterization of OMVPE-grown GaSb-based epilayers using in situ reflectance and ex situ TEM
… grown by organometallic vapor phase epitaxy (OMVPE). These epilayers were principally characterized using in situ spectral reflectance and ex situ transmission electron microscopy (TEM). An in situ spectral (380-1100 nm) reflectance monitoring system was designed and fitted to the OMVPE …
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Low Impurity Content GaN Prepared via OMVPE for Use in Power Electronic Devices: Connection Between Growth Rate, Ammonia Flow, and Impurity Incorporation
GaN has the potential to revolutionize the high power electronics industry, enabling high voltage applications and better power conversion efficiency due to its intrinsic material properties and newly available high purity bulk substrates. However, unintentional impurity incorporation needs to be …
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III-V OMVPE growth and characterisation of graded AlₓGaₓ₋₁As-GaAs layers and heterointerfaces for the development of GRIN-SCH lasers and Gunn diodes
… grown by organometallic vapour phase epitaxy (OMVPE). This work is based on the material development of such device structures and systematically shows the steps taken to achieve the final goal of repeatedly producing high quality devices geared towards small-scale production. The key elements …
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Thermal and photochemical vapor deposition of aluminum nitride and gallium nitride
… the organometallic vapor phase epitaxy (OMVPE) method of growing these materials is discussed in detail in terms of process physics and reactor design and operation.
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An enhancement/depletion process for III-V compound semiconductor heterostructure field-effect transistors and optoelectronic integrated circuits
… (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), as well as device and circuit fabrication have made large-scale integration (LSI) using III-V compound semiconductor devices possible. This thesis describes an enhancement/depletion (E/D) process that utilizes modulation-doped field-effect …
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Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control
Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed …