Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 6 of 6 for “"Non-epitaxial"”.
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Sulfur Implanted GaSb for Non-Epitaxial Photovoltaic Devices
… technologies like TPV more widely available, non-epitaxial dop- ing methods for GaSb must be pursued. Ion implantation is relatively unexplored for GaSb, and can offer advantages over the more common method of zinc diffusion, including higher flexibility with regards to substrate type and …
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DESIGN, FABRICATION AND CHARACTERIZATION OF EPITAXIAL AND NON-EPITAXIAL THERMO-PHOTOVOLTAIC CELLS
… heat sources. The quaternary alloys are grown epitaxially while the binary GaSb devices can be realized through non-epitaxial techniques. In this work, we have pursued fabrication and design methods that will allow us to realize large area GaSb-based diode technology for TPV applications. TPV …
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Characterization of Proton and Sulfur Implanted GaSb Photovoltaics and Materials
… optoelectronic devices. Ion implantation, among non-epitaxial methods, is a common and reliable doping technique to achieve local doping and obtain high-performance ohmic contacts in order to form a pn junction in such devices. An advantage of this technique over the diffusion method is the …
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Advanced Synthesis of Ultra-High Temperature Ceramics (UHTCs) and High Temperature Electron Emitting Materials
… and single crystalline SrTiO3 (STO) substrates. Epitaxial thin films of SrHfO3 (SHO) were also deposited on (100), (110) and (111) STO substrates at 600°C. X-ray diffraction (XRD) results confirmed the formation of epitaxial layer, and reciprocal space mapping (RSM) was used to characterize …
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Gefügeeinfluß auf das Elektromigrationsverhalten von Kupferleitbahnen für höchstintegrierte Schaltungen
… FIB cuts show, that hillocks on PVD lines grow non-epitaxial in contrast to hillocks on ECD lines, which show epitaxial growth. These differences of hillock´s growth may suggest different underlying growth mechanisms. Reliability testing performed on PVD Copper interconnects lead to an …
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Single-crystal germanium growth on amorphous silicon
… does not present a single-crystal substrate for epitaxial growth, however, so high-quality crystal fabrication methods currently used for photonic device fabrication are not possible in back-end processing. This thesis presents a method for the fabrication of high-quality germanium single …