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Showing 1 to 2 of 2 for “"Nitrogen implanted GaAs"”.
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Ultraschnelle optoelektronische und Materialeigenschaften von Stickstoff-haltigem GaAs
This work summarizes properties of nitrogen containing GaAs, which are relevant for optoelectronic application and allow a deeper insight in the physics of this material. In the first part the dependence of the banggap energy of nitrogen implanted GaAs on several process parameters (implanted …
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Preparation and optimization of low-temperature grown GaAs photomixers
… and prepare photomixer devices based on LT GaAs and to optimize them with respect to the maximal output power. Essential part of the photomixer is the MSM photodetector structure. For this reason a major part of the optimization process was done on photodetector structures. One set of our …