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Showing 1 to 20 of 23 for “"Nitridation"”.
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Synthesis, characterisation, and evaluation of supported cobalt molybdenum nitride for Fischer-Tropsch reaction
… and surface elemental composition. Gas to solid nitridation kinetic was thermogravimetrically monitored. CO hydrogenation activity was measured in a fixed bed reactor using various syngas compositions and temperatures at atmospheric pressure. The effect of nitridation conditions on catalytic …
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Dielectrics on Gallium Arsenide Using Silicon as a Sacrificial Layer: Formation Kinetics and Interface State Densities
… a dielectric/Si/GaAs structure formed by direct nitridation or UV ozone oxidation of a sacrificial pseudomorphic epitaxial Si layer on a GaAs (100) substrate. The nitridation and oxidation process kinetics were studied by X-ray photoelectron spectroscopy (XPS). Thicknesses and compositions were …
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Influence of low nitrogen gas pressures (< 1.0 MPa) and additives on the nitridation, formation and densification of B and O-SiAlON ceramics produced by reaction bonding and silicothermal reduction
… compositions and of different additives on the nitridation behaviour and SiAlON phase formation have been studied. All of the additives did not have the same effects on the nitridation of SiAlONs as on the nitridation of pure Si. Indeed, typically, CaO had a negative effect on the nitridation of …
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Formation of Silicon Nitride Structures by Direct Electron-Beam Writing
… stays (2 x 1), but the background increases with nitridation until a fully disordered structure results. Our Auger and LEED data further indicates that the initial stage of electron-induced nitridation is the formation of a monolayer of chemisorbed nitrogen via the nucleation and lateral growth of …
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High-K MOSFETS with high mobility channels
… layer contains no GeOx but SiNxOy if a nitridation treatment is performed on I?-SiGe prior to the dielectrics deposition. The nitridation was found to improve the electrical properties of I?-Si50Ge50 capacitors while degrade the hole mobility of I?-Si60Ge40 transistors. The second part …
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Development and Study of Atomic Nitrogen Sources for Synthesis of Electronic Materials
… atomic nitrogen source was used to investigate nitridation of thin silicon dioxide films at 760°C. The SiO2 films were substantially nitrided by an exposure to the atomic flux of ∼10 15 cm-2s-1 for only 30 s.
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Formation of Silicon-Nitride Structures by Direct Electron-Beam Writing
… stays (2 X 1), but the background increases with nitridation until a fully disordered structure results. Our Auger and LEED data further indicates that the initial stage of electron-induced nitridation is the formation of a monolayer of chemisorbed nitrogen via the nucleation and lateral growth of …
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
… ~ 4.15eV, and ~ 4.7 eV, respectively. A surface nitridation technique using NH3 anneal has been investigated to reduce interfacial reactions and consequently the equivalent oxide thickness (EOT) of TaN/HfO2/ Si MOS capacitors. For the same EOT, the nitrided samples showed 1 ~ 2 order of magnitude …
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Synthesis, characterization and reactivity of tungsten oxynitride
… to be carried out giving an activation energy of nitridation of 109 kJ mol⁻¹. A heating rate of 0.016 K S⁻¹ gave optimum synthesis conditions. Solid state intermediates were studied by interruption of the temperature program at various stages. No distinct suboxide phases formed along the synthesis …
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HfO2 as gate dielectric on Si and Ge substrate
… the dielectric deposition. The effect of surface nitridation, on interface as well as on bulk oxide, trap energy levels were investigated using low temperature C-V measurements. They revealed additional defect levels in the nitrided devices indicating diffusion of nitrogen from interface into the …
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Fabrication of Metal and Organic Nanostructures on Silicon(100) With Scanning Tunneling Microscope-Based Lithography
… work has demonstrated selective oxidation and nitridation of STM- patterned areas by exposing the patterned surface to O2 and NH3, respectively. Here, this technique is applied to the fabrication of organic and metal-containing nanostructures on the Si(100) surface. Norbornadiene, an olefinic …
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Synthesis and characterization of ceramics in the Ti-B-N-C system
… by identifying the phase formed after the nitridation process. The microstructures produced after the reduction-nitridation process have been correlated with the thermodynamic and kinetic parameters. The synthesized titanium nitride powder was identified as the carbonitride phase, …
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Synthesis and characterization of Titanium Nitride Nanowires for neural-electrode coatings for improving electrode/neuron interface in the brain
… and crystallinity followed by (3) a novel plasma nitridation step using Plasma Enhanced Chemical Vapour Deposition (PECVD) which offered a lower synthesis temperature than the conventional processing temperature reported in the literature. An optimised TiN thin film, grown through Radio Frequency …
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Nanostructured Porous High Surface Area Ceramics for Catalytic Applications
… were used to prepare VN/MCM-41 composites via nitridation in ammonia at 800oC. This method allowed to prepare highly dispersed, X-ray amorphous vanadium nitride species, with high activity in the propane dehydrogenation. Compared to nitridation of supported vanadium oxide prepared via the …
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Effect of interfacial thermal conductance and fiber orientation on the thermal diffusivity/conductivity of unidirectional fiber-reinforced ceramic matrix composites
… and using hotisostatic-pressing (HIP) after nitridation. The formation of an interfacial gap at the interface due to thermal expansion mismatch between the fiber and the matrix in reference and HIP'd composites, and removal of carbon coating for oxidized composites, resulted in the dependence …
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Characterization and modeling of low-frequency noise in Hf-based high -kappa dielectrics for future cmos applications
… and the quality of the interfacial oxide, the nitridation effects of the layers, high-K oxide, bulk properties of the high-K layer. percentage of hafnium content in the high-K, post deposition anneal (PDA) treatments, effects of gate electrode material (poly-silicon. fully silicided or metal). …
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Electrical characterization of fluorinated and oxynitrided gate-oxides
… layers. Among these processes, fluorination and nitridation methods have emerged as promising techniques for ultra-large scale integrated circuit (ULSI) technology. Reported data in the literature is presented to show the advantages of these two processes. There are various ways to fabricate …
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Controlled Surface Layer Deposition for Steel Surface Hardening
… 1 h or 9 h under Ar (sintering) and 5% H2-N2 (nitridation), were used for surface hardening. The coarse Ti particles (≤50 μm) were suspended in ethanol using the charging agent poly(diallyldimethylammonium chloride) (PDADMAC). EPD: The present work demonstrated the importance of assessing the …
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Thermomechanical behavior of advanced manufactured heat-resistant alloys and their weldments
… attack, whereas IN740H exhibited internal nitridation and more uniform corrosion. EBAM-to-wrought H282 welds showed the highest corrosion rate due to elevated iron content, reduced Al content and different grain morphology. Explosion welding (EXW) cladding was explored as a cost-effective …
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Macroporous Semiconductors Tantalum Oxide, (Oxy)nitride and Nitride for Photocatalytic Hydrogen Evolution
… crystallite fragmentation as the level of nitridation increases. Calculated crystallite size as determined by PXRD are 60, 36, 35 nm for bulk Ta2O5, TaON and Ta3N5 and 40, 33, 18 nm for macroporous Ta2O5, TaON and Ta3N5, respectively. Electron microscopy of 0.5 wt% Pt loaded Ta2O5 showed …
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