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Showing 1 to 3 of 3 for “"Nichtflüchtiger Speicher"”.
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Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO 3 thin films
To overcome the physical limits of todays memory technologies new concepts are needed. The resistive random access memory (RRAM), which bases on a nonvolatile and repeatable change of the resistance by external electrical stimuli, seems to be one promising candidate. Within the scope of this work, …
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Integration of resistive switching devices in crossbar structures
Conventional CMOS-technology defined by optical lithography will reach its physical limits within the next years together with technologies adopted for data storage. This work presents and combines the alternative concepts of resistively switching devices, usable as nonvolatile memory elements or …
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Electrical transport and switching in phase change materials
Phase change materials, typically composed out of Ge, Sb and Te alloys, are materials that can switch very fast between two stable states, the amorphous and the crystalline phase. The optical contrast of the two stable phases led to the application in optical data storage such as compact disks …