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Showing 1 to 9 of 9 for “"Next generation lithography"”.

  1. Polymers for Next Generation Lithography

    Since the invention of microlithography there has been an exponential increase in the speed and performance of electronic devices with smaller and smaller arrays. Since then, the semiconductor industry has relied on electron beam lithography for sub-micron patterning of integrated circuits. …

    texas-state Repository record for Polymers for Next Generation Lithography (opens in a new tab)

  2. Novel resist materials for next generation lithography

    … as negative-tone resists for electron beam lithography with impressive capability for high resolution and high plasma etching resistance, due to their carbon-rich nature. Their primary drawback of extremely poor sensitivity has been addressed by implementation of chemical amplification. A …

    birmingham Repository record for Novel resist materials for next generation lithography (opens in a new tab)

  3. Design-technology co-optimization in next generation lithography

    Lithography continues to be the backbone of the integrated circuit (IC) industry. While the critical dimension (CD) keeps shrinking with the pace of Moore’s law, the progress in lithography lags far behind. The gap between manufacturing capability and the expectation of design performance finally …

    uiuc Repository record for Design-technology co-optimization in next generation lithography (opens in a new tab)

  4. Materials for next-generation lithography: Crosslinked molecular resists and photo-patternable underlayers

    … new technologies are needed to maintain pace. Next-generation lithographic techniques, including extreme ultraviolet lithography (EUVL), are expected to replace current lithography processes in the coming years. This new technique will require new tools and materials in order to be realized. In …

    gatech Repository record for Materials for next-generation lithography: Crosslinked molecular resists and photo-patternable underlayers (opens in a new tab)

  5. Minimizing electron optical aberrations

    … optical instruments, especially used for lithography (SCALPEL) and high resolution electron microscopy (HREM). Since the invention by Berger and Gibson [1) in 1989, SCALPEL (SCattering with Angular Limitation in Projection Electron-Beam Lithography) has attracted much attention as a …

    uiuc Repository record for Minimizing electron optical aberrations (opens in a new tab)

  6. Layout decomposition for triple patterning lithography

    … limitations, the traditional 193 nm immersion lithography is facing huge challenges in fabricating such tiny features. Several types of next-generation lithography techniques have been discussed for years, such as {\em extreme ultra-violet} (EUV) lithography, {\em E-beam direct write}, and {\em …

    uiuc Repository record for Layout decomposition for triple patterning lithography (opens in a new tab)

  7. Diagnosis of the flux emanating from the intermediate focus of an extreme ultraviolet light lithography source

    … of extreme ultraviolet (EUV) light lithography as the solution for next generation lithography needs, stands at a critical point. Having already missed the last several projected insertion nodes, it is necessary to rapidly solve the current issues with the light source that prevent …

    uiuc Repository record for Diagnosis of the flux emanating from the intermediate focus of an extreme ultraviolet light lithography source (opens in a new tab)

  8. Pattern Formation and Phase Behavior in PS-B-SI Containing Block Copolymer Thin Film

    … and the high-index fluid-based immersion ArF lithography, may be cover one or two generations, these lithography technologies are getting more severe for the feature size scaling down to sub 10 nm. The directed self-assembly technology of block copolymers is one of the candidates for next

    ohiolink Repository record for Pattern Formation and Phase Behavior in PS-B-SI Containing Block Copolymer Thin Film (opens in a new tab)

  9. Electron beam lithography of molecular glass resist films prepared by physical vapor deposition

    … of the art exposing technique 193 nm immersion lithography with applied multi-patterning gradually reaches its limits in the ongoing miniaturization. But for the continuation of miniaturization of integrated circuits in the long term, a further progression in the processing steps as well as the …

    bayreuth Repository record for Electron beam lithography of molecular glass resist films prepared by physical vapor deposition (opens in a new tab)