Global ETD Search
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Showing 1 to 17 of 17 for “"Negative Bias Temperature Instability"”.
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Negative bias temperature instability (NBTI) experiment
The phenomenon known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal …
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FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY
Negative Bias Temperature Instability (NBTI) in silicon based metal-oxide-semiconductor-field-effect-transistors (MOSFETs) has been recognized as a critical reliability issue for advanced space qualified electronics. The phenomenon manifests itself as a modification of threshold voltage (Vth) …
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Characterization of negative bias temperature instability and lifetime prediction for pMOSFETs
… in silicon oxynitrides (SiON) increases, the negative bias temperature instability (NBTI) rises and becomes a limiting factor for device lifetime. The NBTI can recover significantly during typical measurement time when using conventional instruments. To suppress this recovery, several fast …
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Phase Noise in CMOS Phase-Locked Loop Circuits
… different types of PLL designs. Hot carrier and negative bias temperature instability effects are analyzed from simulations and experiments. Phase noise of a CMOS phase-locked loop as a frequency synthesizer circuit is modeled from the superposition of noises from its building blocks: …
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Selected topics on advanced electron devices and their circuit applications
… passive devices.I part I, a systematic study of Negative Bias Temperature Instability (NBTI) in p-MOSFETs with ultra-thin SiON gate dielectric is reported. By using the fast pulsed method, a fast Dynamic NBTI (DNBTI) component is distinguished from the conventional slow one for the first time. …
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Experimental Analysis on Aging of Integrated Circuits
… of CMOS devices, reliability issues such as negative bias temperature instability (NBTI), hot carrier injection (HCI), time dependent dielectric breakdown (TDDB), and electromigration (EM) are coming up as potential threats to superior performance in the field. All these reliability issues …
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VALIDATION OF CIRCUIT TIMING BEHAVIOR IN THE PRESENCE OF DELAY DEFECTS AND NBTI AGING
… circuit. Furthermore, reliability issues such as Negative Bias Temperature Instability (NBTI) and Hot carrier injection impact the threshold voltage of a transistor which, in turn, affect path delays. This necessitates selecting critical paths and formulating test methods that consider the above …
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Development of characterization techniques for negative bias temperature instabilities
… leads to higher electrical field and operation temperature and, in turn, accelerates the degradation. One of the most serious reliability issues for the current CMOS technology is the negative bias temperature instability (NETI). This project will focus on investigating the NBTI and the positive …
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DEFECTS AND LIFETIME PREDICTION OF GERMANIUM MOSFETS
… high-k/Si-cap/Ge and high-k/GeO2/Ge. Negative Bias Temperature Instability (NBTI) is still one of the main reliability issues, limiting the device lifetime. In this project, it is found that the conventional lifetime prediction method developed for Si is inapplicable to Ge devicesand …
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On variability and reliability of poly-Si thin-film transistors
… in flexible substrate and can have low process temperature. These attributes make poly-Si TFT technology more attractive for new applications, such as flexible displays, biosensors, and smart clothing. However, due to the random nature of grain boundaries (GBs) in poly-Si film and self-heating …
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Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability
… and increasing chip power dissipation, operating temperatures for device have also been increasing. Another reliability concern, which is the negative bias temperature instability (NBTI) caused by the interface traps under high temperature and negative gate voltage bias, arises when the operation …
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TiN/HfO2/SiO2/Si gate stacks reliability : Contribution of HfO2 and interfacial SiO2 layer
… of various degradation mechanisms such as negative bias temperature instability (NBTI) with that of the dielectric breakdown; and (iv) a fast evaluation process to estimate statistical breakdown distribution. In this dissertation a comparative study was conducted to investigate individual …
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Statistical guarantees of performance for RTL designs
… to obtain RTL estimates of aging resulting from negative bias temperature instability (NBTI) effects. We describe how our methodology can be extended to compute bit error rates (BER) that are commonly-used performance metrics for RTL designs of wireless communication systems. For RTL of large …
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Study Of Nanoscale Cmos Device And Circuit Reliability
… reliability issues caused by voltage and/or temperature stress are gate oxide breakdown (BD), hot carrier effects (HCs), and negative bias temperature instability (NBTI). They become even more important for the nanoscale CMOS devices, because of the high electrical field due to the small …
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Reliability Studies of TiN/Hf-Silicate Based Gate Stacks
… first time in Hf-silicate gate stacks from low temperature and leakage measurements. Excellent match between experimental and calculated defect levels shows that bulk O vacancies are probably responsible for electron trapping at both shallow and deep levels. Their role in trapping and transport …
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Probing technique for energy distribution of positive charges in gate dielectrics and its application to lifetime prediction
… the dimensions of CMOS devices has increased the negative bias temperature instability (NBTI) of pMOSFETs to such a level that it is limiting their lifetime. This increase of NBTI is caused mainly by three factors: an increase of nitrogen concentration in gate dielectric, a higher operation …
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Design automation for circuit reliability and energy efficiency
This dissertation presents approaches to improve circuit reliability and energy efficiency from different angles, such as verification, logic synthesis, and functional unit design. A variety of algorithmic methods and heuristics are used in our approaches such as SAT solving, data mining, logic …