Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 5 of 5 for “"Narrow Bandgap Semiconductors"”.

  1. Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices

    … as binary group IV or ternary III-V compound semiconductors, and novel device architectures, such as the tunnel field-effect transistor (TFET), are projected to continue transistor miniaturization beyond the Si CMOS era. Unlike conventional MOSFET technology, TFETs operate on the band-to-band …

    vt Repository record for Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices (opens in a new tab)

  2. Nanostructured BaTiO3 Thin Films for Enhanced Photoresponse

    … to visible light were achieved by incorporating narrow-bandgap semiconductors into the ferroelectric matrix. BTO/CoFe2O4 (CFO) composite films with controllable composition were successfully synthesized. The transmission electron microscopy revealed a homogeneous structure, which has not been …

    aus-cath Repository record for Nanostructured BaTiO3 Thin Films for Enhanced Photoresponse (opens in a new tab)

  3. Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors

    … are usually made from HgCdTe alloys. These narrow-bandgap semiconductors exhibit favourable optoelectronic properties, however fabrication challenges lead to extravagant costs. In comparison, mature fabrication processes are available for III-V materials. Interband photodetectors made from …

    aus-cath Repository record for Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors (opens in a new tab)

  4. Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors

    … are usually made from HgCdTe alloys. These narrow-bandgap semiconductors exhibit favourable optoelectronic properties, however fabrication challenges lead to extravagant costs. In comparison, mature fabrication processes are available for III-V materials. Interband photodetectors made from …

    anu Repository record for Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors (opens in a new tab)

  5. Strongly correlated electron behavior in transition metal intermetallics: enhanced thermoelectricity and quantum criticality in FeGa₃ and superconductivity in NiBi₃

    … properties. These materials are non-magnetic, narrow band gap semiconductors with large n-type thermopower below room temperature. Chemical doping drastically changes physical properties and thermoelectric properties enhances by large percentage over the pure compounds. An important structural …

    lsu-thes Repository record for Strongly correlated electron behavior in transition metal intermetallics: enhanced thermoelectricity and quantum criticality in FeGa₃ and superconductivity in NiBi₃ (opens in a new tab)