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Showing 1 to 5 of 5 for “"Narrow Bandgap Semiconductors"”.
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Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices
… as binary group IV or ternary III-V compound semiconductors, and novel device architectures, such as the tunnel field-effect transistor (TFET), are projected to continue transistor miniaturization beyond the Si CMOS era. Unlike conventional MOSFET technology, TFETs operate on the band-to-band …
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Nanostructured BaTiO3 Thin Films for Enhanced Photoresponse
… to visible light were achieved by incorporating narrow-bandgap semiconductors into the ferroelectric matrix. BTO/CoFe2O4 (CFO) composite films with controllable composition were successfully synthesized. The transmission electron microscopy revealed a homogeneous structure, which has not been …
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
… are usually made from HgCdTe alloys. These narrow-bandgap semiconductors exhibit favourable optoelectronic properties, however fabrication challenges lead to extravagant costs. In comparison, mature fabrication processes are available for III-V materials. Interband photodetectors made from …
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
… are usually made from HgCdTe alloys. These narrow-bandgap semiconductors exhibit favourable optoelectronic properties, however fabrication challenges lead to extravagant costs. In comparison, mature fabrication processes are available for III-V materials. Interband photodetectors made from …
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Strongly correlated electron behavior in transition metal intermetallics: enhanced thermoelectricity and quantum criticality in FeGa₃ and superconductivity in NiBi₃
… properties. These materials are non-magnetic, narrow band gap semiconductors with large n-type thermopower below room temperature. Chemical doping drastically changes physical properties and thermoelectric properties enhances by large percentage over the pure compounds. An important structural …