Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 13 of 13 for “"Narrow Bandgap"”.
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Multisource Evaporation of Perovskite Solar Cells
… annealing temperature. Moreover, their tunable bandgaps, with emission from the blue to near-infrared spectrum region possible, demonstrates their potential for different optoelectronic applications, such as solar cells, light-emitting diodes and transistors. The device performance of perovskite …
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Resonances of periodic metal-dielectric structures at the infrared wavelength region
… with Micro-Strips and transmission line theory. Narrow transmission regions for inductive meshes and narrow bandgap regions for capacitive meshes may be obtained from layered structures for the aligned configuration and spacing of 1/4 resonance wavelength of a single layer.
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Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices
… in steep switching characteristics. Furthermore, narrow bandgap semiconductors, such as germanium (Ge) and InxGa1-xAs, enhance the ON-state current and improve the switching behavior of TFET devices, thus making these materials attractive candidates for further study. Moreover, epitaxial growth of …
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Heteroepitaxial Ge on Si via High-Bandgap III-V Buffers for Low-Power Electronic Applications
… drive current requires the adoption of narrow bandgap channel materials with superior transport properties. However, the use of such materials as bulk substrates remains cost-prohibitive. Thus, another key challenge lies in the heterogeneous integration of high-mobility channel materials …
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Exploring the connections between nanostructure and operational stability in next-generation energy materials
… is studied and it is demonstrated that both narrow-bandgap γ-phase and wide-bandgap δ-phase co-exist at the nanoscale, enabling stable and bright white-light emission. Overall, this thesis provides insights into the role of nanoscale structure in dictating the properties and behaviour of …
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Nanostructures for Coherent Light Sources and Photodetectors
… are still a key challenge due to the indirect bandgap of silicon that impedes coherent light sources. To overcome this issue, we have studied, fabricated, and characterized nanostructures including single semiconductor epilayers, multiple quantum wells, and graphene-semiconductor …
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Physical and optoelectronic properties of copper silver indium diselenide thin films
… of the compounds it is possible to change the bandgap of the material in order to collect sunlight more efficiently. A promising alloy for tunable bandgap solar cells is the (Cu,Ag)(In,Ga)Se2 system. The focus of my dissertation is to perform a comprehensive characterization of the structural …
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Nanostructured BaTiO3 Thin Films for Enhanced Photoresponse
… to visible light were achieved by incorporating narrow-bandgap semiconductors into the ferroelectric matrix. BTO/CoFe2O4 (CFO) composite films with controllable composition were successfully synthesized. The transmission electron microscopy revealed a homogeneous structure, which has not been …
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
… are usually made from HgCdTe alloys. These narrow-bandgap semiconductors exhibit favourable optoelectronic properties, however fabrication challenges lead to extravagant costs. In comparison, mature fabrication processes are available for III-V materials. Interband photodetectors made from …
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
… are usually made from HgCdTe alloys. These narrow-bandgap semiconductors exhibit favourable optoelectronic properties, however fabrication challenges lead to extravagant costs. In comparison, mature fabrication processes are available for III-V materials. Interband photodetectors made from …
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Epitaxial Gallium Oxide Heterojunctions for Vertical Power Rectifiers
… come to fruition as the performance limits of narrow bandgap (EG) materials such as Si (1.1 eV) have been reached. The EG is a key measure of a materials ability to operate at high voltages and within high temperature environments. This is due to the direct relationship of the EG to the …
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Molecular Encapsulation of Conjugated Polymers for Organic Electronics
… monomers to adapt and control the molecular bandgap of the polymers to suit specific applications. Furthermore, we consider the influence of conjugation length and aggregation on the electronic properties and device performance. Lastly, we discuss different synthetic procedures employed to …
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Strongly correlated electron behavior in transition metal intermetallics: enhanced thermoelectricity and quantum criticality in FeGa₃ and superconductivity in NiBi₃
… properties. These materials are non-magnetic, narrow band gap semiconductors with large n-type thermopower below room temperature. Chemical doping drastically changes physical properties and thermoelectric properties enhances by large percentage over the pure compounds. An important structural …