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Showing 1 to 15 of 15 for “"Nanodraht"”.

  1. Optical Nanoantennas for Ultrafast Nonlinear Spectroscopy of Individual Nanosystems

    … quantisierter Zustände eines einzelnen CdSe Nanodrahtes. Wir messen das anregungsinduzierte Bleichen unterschiedlicher Exzitonenübergänge und erhalten Einsicht in zuvor versteckte Prozesse und Größen wie zum Beispiel die zeitabhängige Population verschiedener Zustände. Die beobachteten …

    bayreuth Repository record for Optical Nanoantennas for Ultrafast Nonlinear Spectroscopy of Individual Nanosystems (opens in a new tab)

  2. Dielectrophoretic formation of nanowires and devices

    We report the self assembly of nanostructures via. the bottom-up approach by dielectrophoresis. Dielectrophoresis deals with the force on an electric dipole placed in an external in-homogenous field. The force depends on the geometry and volume of the dielectric material and on the frequency and …

    qucosa-diss

  3. Ab initio Beschreibung der elektronischen Struktur und der Transporteigenschaften von metallischen Nanodrähten

    Ab initio calculations of the electronic structure of freestanding Cu and Na nanowires with a diameter of few atoms are presented. The calculations are based on density functional theory in local density approximation using a Screened Korringa-Kohn-Rostoker-Green's function method. The method was …

    qucosa-diss

  4. Strained and unstrained silicon nanowire array MOSFETs : fabrication and physical analysis

    Today, state of the art MOSFETs feature effective gate lengths of only a few tens of nanometers pushing the conventional MOSFET electronics towards nanoelectronics. The International Technology Roadmap for Semiconductors (ITRS) predicts the 18nm node for the year 2018, that requires a physical gate …

    aachen Repository record for Strained and unstrained silicon nanowire array MOSFETs : fabrication and physical analysis (opens in a new tab)

  5. Charakterisierung des Ladungstransfers von immobilisiertem Cytochrom c

    The Aim of this work was to study the charge transfer of redoxactive proteinswith new techniques. Especially the behavior of individual proteins should be observed to obtain a clear and deep insight in the charge transfer and its influencing parameters. Since methods that integrate over a large …

    aachen Repository record for Charakterisierung des Ladungstransfers von immobilisiertem Cytochrom c (opens in a new tab)

  6. Shape Evolution of Nanostructures by Thermal and Ion Beam Processing

    Single-crystalline nanostructures often exhibit gradients of surface (and/or interface) curvature that emerge from fabrication and growth processes or from thermal fluctuations. Thus, the system-inherent capillary force can initiate morphological transformations during further processing steps or …

    qucosa-diss

  7. Eigenschaften von Silber-Nanodrähten

    This thesis treats the preparation and properties of silver-nanowires. It is divided into four parts:1) Preparation and determination of the atomic structure and shape of the wires.A chemical reduction method was applied to produce silver-nanowires in an aqueous electrolyte. The thickness of …

    aachen Repository record for Eigenschaften von Silber-Nanodrähten (opens in a new tab)

  8. Integrated nanoscaled detectors of biochemical species

    Rapid and reliable diagnostics of a disease represents one of the main focuses of today’s academic and industrial research in the development of new sensor prototypes and improvement of existing technologies. With respect to demographic changes and inhomogeneous distribution of the clinical …

    qucosa-diss

  9. Growth and characterisation of group-III nitride-based nanowires for devices

    One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature Tsub has been studied leading to the …

    aachen Repository record for Growth and characterisation of group-III nitride-based nanowires for devices (opens in a new tab)

  10. Physical investigations of novel materials and structures for Nano-MOSFETs

    In this thesis four important physical and material aspects faced by MOSFET devices as dimensions move to the length scale of 10nm have been investigated: i) metal source/drain contacts with dopant segregation for reduced contact resistance and improved carrier injection; ii) variability of the …

    aachen Repository record for Physical investigations of novel materials and structures for Nano-MOSFETs (opens in a new tab)

  11. Elektrischer Transport in GaN- und InN-Nanodrähten

    This thesis discusses the analysis of the electrical transport in GaN and InN nanowires at room temperature and deep temperatures. From those measurements two different transport models for those two in matter of the band banding completely different materials have been found. To perform those …

    aachen Repository record for Elektrischer Transport in GaN- und InN-Nanodrähten (opens in a new tab)

  12. Growth of undoped and doped IIInitride nanowires and their characterization

    In the twenty first century, the rapid development of science, engineering and technology is blessed by the application of nanotechnology. It has become an attractive field of research among the scientists and created a lot of attention of the general public. Fabrication and characterization of …

    aachen Repository record for Growth of undoped and doped IIInitride nanowires and their characterization (opens in a new tab)

  13. Silicium Nanodrähte für die extrazelluläre Ableitung elektrischer Aktivität

    Due to their high surface-to-volume ratio silicon nanowires are promising candidates for highly sensitive biosensors. We designed and fabricated nanowire transistors suitable for the extracellular detection of electrical activity. These sensors were characterized thoroughly and tested with HL-1 and …

    aachen Repository record for Silicium Nanodrähte für die extrazelluläre Ableitung elektrischer Aktivität (opens in a new tab)

  14. Phasenkohärenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodrähten

    Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the …

    aachen Repository record for Phasenkohärenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodrähten (opens in a new tab)

  15. Quantentransport in III-V-Halbleiternanosäulen

    The goal of this work has been to investigate und understand the electronic transport properties of vertical GaAs/AlAs nanocolumn resonant tunneling diodes (RTDs) and field effect transistors (RTTs) as well as of vertical InAs nanocolumn phase interference diodes. Using new top-down processing …

    aachen Repository record for Quantentransport in III-V-Halbleiternanosäulen (opens in a new tab)