Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 6 of 6 for “"NF3"”.
-
N2, O2, and NF3 Dissociation in a Low Frequency, High Density Plasma Source
… Ar actinometry for various mixes of N2, O2, and NF3 feed gases with Ar at 400 sccm total flow rate in a low frequency (400 kHz), high pressure (4.0 Torr), inductively-coupled toroidal remote plasma source from MKS Instruments, operating at a power density of 5 – 50 W/cm3. The dissociation of O2 …
-
Ätzen von Titannitrid mit Halogenverbindungen
… Probenhalter platziert. Eine Argon/NF3 Gasmischung wurde in einer externen Plasmaquelle (RPS) zerlegt und in die Reaktionskammer geschleust. Die Ätzung wurde mit in-situ Reflexionsmessung beobachtet. Experimente mit Chlorzugabe wurden unternommen und ein starker Einfluss auf den …
-
Study of surface kinetics in PECVD chamber cleaning using remote plasma source
… gases. For example, the bonding energy of N-F in NF3 gas is different from the bonding energy of C-F bonding in C2F6. Experimental result shows that C2F6 + 02 gas requires more power than NF3 gas to dissociate in the plasma due to the different resistivity. The second object is to understand gas …
-
Evaluation of unsaturated fluorocarbons for dielectric Etch applications
… (HFCs), iodofluorocarbons (IFCs), and NF3/hydrocarbons. One class of chemistries that have shown considerable promise is the unsaturated fluorocarbons (UFCs). The research documented herein uses the UFCs to assess etch process and emissions performance. Not only are these novel …
-
Processing and protection of rare earth permanent magnet particulate for bonded magnet applications
… of a reactive gas, nitrogen trifluoride (NF3). The ability to control surface chemistry during atomization processing of fine spherical RE-Fe-B powders produced advantages over current processing methodologies. In particular, the capability to coat particles while "in flight" may eliminate …
-
Characterization, optimization, and simulation in through silicon via (TSV) dry etch
… phases within less than 1 second. A post-etch NF3/O2 plasma treatment has been used to successfully eliminate the scallops on the profile sidewalls but it creates a ring-shaped defect at the bottom of the profile. Optimizations on the bias voltage, gas ratio and pressure has been performed in …