Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 25 for “"NBTI"”.
-
Negative bias temperature instability (NBTI) experiment
… known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal operation and …
-
VALIDATION OF CIRCUIT TIMING BEHAVIOR IN THE PRESENCE OF DELAY DEFECTS AND NBTI AGING
… such as Negative Bias Temperature Instability (NBTI) and Hot carrier injection impact the threshold voltage of a transistor which, in turn, affect path delays. This necessitates selecting critical paths and formulating test methods that consider the above factors. An efficient method to select …
-
Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability
… is the negative bias temperature instability (NBTI) caused by the interface traps under high temperature and negative gate voltage bias, arises when the operation temperature of devices increases. NBTI has received much attention in recent year and it is found that NIT is present for all stress …
-
Experimental Analysis on Aging of Integrated Circuits
… such as negative bias temperature instability (NBTI), hot carrier injection (HCI), time dependent dielectric breakdown (TDDB), and electromigration (EM) are coming up as potential threats to superior performance in the field. All these reliability issues cause intermittent failures and finally …
-
DEFECTS AND LIFETIME PREDICTION OF GERMANIUM MOSFETS
… Negative Bias Temperature Instability (NBTI) is still one of the main reliability issues, limiting the device lifetime. In this project, it is found that the conventional lifetime prediction method developed for Si is inapplicable to Ge devicesand defect properties in Ge and Si MOSFETs …
-
FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY
Negative Bias Temperature Instability (NBTI) in silicon based metal-oxide-semiconductor-field-effect-transistors (MOSFETs) has been recognized as a critical reliability issue for advanced space qualified electronics. The phenomenon manifests itself as a modification of threshold voltage (Vth) …
-
Selected topics on advanced electron devices and their circuit applications
… study of Negative Bias Temperature Instability (NBTI) in p-MOSFETs with ultra-thin SiON gate dielectric is reported. By using the fast pulsed method, a fast Dynamic NBTI (DNBTI) component is distinguished from the conventional slow one for the first time. Evidence has been shown that this …
-
Probing technique for energy distribution of positive charges in gate dielectrics and its application to lifetime prediction
… the negative bias temperature instability (NBTI) of pMOSFETs to such a level that it is limiting their lifetime. This increase of NBTI is caused mainly by three factors: an increase of nitrogen concentration in gate dielectric, a higher operation electrical field, and a higher temperature. …
-
Development of characterization techniques for negative bias temperature instabilities
… This project will focus on investigating the NBTI and the positive charges responsible for it. Modem MOSFETs use gate dielectrics in the nanometer range and the degradation will recover rapidly. To suppress the recovery, high speed characterization technique is needed. In this project the …
-
A persistent-mode MgB₂ 0.5-T/240-mm solid-nitrogen-cooled magnet for MRI
… superconductor of niobium titanium (NbTi) with a critical temperature of 9.8 K stands out among other superconductors because of its excellent mechanical properties, adequate electromagnetic properties and low manufacturing cost. Since the MRI magnet became available in the 1970s, …
-
Characterization of negative bias temperature instability and lifetime prediction for pMOSFETs
… the negative bias temperature instability (NBTI) rises and becomes a limiting factor for device lifetime. The NBTI can recover significantly during typical measurement time when using conventional instruments. To suppress this recovery, several fast techniques have been developed, including …
-
Study Of Nanoscale Cmos Device And Circuit Reliability
… and negative bias temperature instability (NBTI). They become even more important for the nanoscale CMOS devices, because of the high electrical field due to the small device size and high temperature due to the high transistor densities and high-speed performances. This dissertation focuses …
-
On variability and reliability of poly-Si thin-film transistors
… enhanced negative bias temperature instability (NBTI), the variability and reliability of poly-Si TFTs are the main obstacles that impede the application of poly-Si TFTs in high-performance circuits. The primary focus of this dissertation is to develop new design methodologies and modeling …
-
Monofilament MgB₂ wires for MRI magnets
… installed worldwide. Most of them are made of NbTi or Nb₃Sn, but they are usually very expensive to purchase or operate. So, my colleagues chose MgB₂ wires to develop low-cost and easy-to-operate MRI units which serve to the majority of the humanity. Because we have a reliable technology to …
-
TiN/HfO2/SiO2/Si gate stacks reliability : Contribution of HfO2 and interfacial SiO2 layer
… such as negative bias temperature instability (NBTI) with that of the dielectric breakdown; and (iv) a fast evaluation process to estimate statistical breakdown distribution. In this dissertation a comparative study was conducted to investigate individual breakdown characteristics of …
-
Phase Noise in CMOS Phase-Locked Loop Circuits
… (HCE) and negative bias temperature instability (NBTI). These two reliability issues pose challenges to designers for designing of chips in deep submicron CMOS technologies. A new strategy of switchable CMOS phase-locked loop frequency synthesizer is proposed to increase its tuning range. The …
-
Caracterização microestrutural em função da temperatura de serviço de tubos de aços HP-Modificados ao Nb e Ti envelhecidos em fornos de reforma a vapor
… are currently manufactured with HP-Nb and HP-NbTi steels. The service temperature of these tubes causes different degrees of metallurgical aging along their lengths. The purpose of the present work is to characterize the aging of these steels at different temperatures, taking into account the …
-
Development of electrical characterization techniques for lifetime prediction and understanding defects in InGaAs-based III-V transistors
… issue is bias temperature instability (BTI), NBTI for pMOS and PBTI for nMOS. Therefore, this thesis will talk about investigating the NBTI/PBTI and III-V device performance and lifetime prediction issues. For the whole ofthe thesis, it can be divided by 4 chapters to describe the details, the …
Page 1 of 2