Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 13 of 13 for “"N-doping"”.
-
Electrical and Optical Probing of Extremely Large Planar Polymer Light-Emitting Electrochemical Cells
… on the principle of in situ electrochemical doping and the formation of a p-n junction. Compared to conventional polymer light-emitting diodes, LECs possess some favorable device characteristics, making them attractive candidates for flat panel display applications. However, the underlying …
-
Application of scalable and inexpensive modification on carbon in clean technologies
… gas detonation process is explored for N-doping via a post-growth thermal annealing process. From the linear sweep voltammetry in O₂-saturated 0.50 M H₂SO₄ solution by rotating disk electrode (RDE), it has been demonstrated that, after N-doping on the carbon, the onset potential of ORR is …
-
Nano-Silicon/graphene Composite Anodes For Enhanced Performance Lithium Ion Batteries
… electrochemical mechanisms pertaining to the N-doping effect, Si alloying and conversion reactions. With the resulting balance of enhanced capacity and improved cyclability, this study advances the development of Si-based composite anodes and its charge towards commercialization.</p>
-
High-throughput characterisation and device integration of nanomaterials
… oxidising pre-treatments counteract the n-doping of conventional alumina ALD processes. The last chapter applies the results of previous chapters to MoSe2/WSe2 heterostructures. SECM was used to optimise the contrast between MoSe2 and WSe2 and used to identify >1000 heterostructure domains. …
-
Formation Mechanisms and Photocatalytic Properties of ZnO-Based Nanomaterials
… the incorporation of Au nanoparticles, N-doping of ZnO, supporting ZnO nanostructures on reduced graphene oxide (RGO), and supporting N-doped ZnO on N-doped RGO. ZnO-based nanostructures were studied systematically through the entire process from synthesis and characterization to their use …
-
Carbon Nitride and Conjugated Polymer Composite Materials
… was further evidenced by suppression of the n-doping of the PBT polymer by CNx. Nanoscale atomic force microscopy (AFM) and current-sensing AFM data suggested that CNx may form a bulk heterojunction with PBT. Thermal annealing of nitrogen rich CNx films led to n-type semiconductor materials …
-
Ultraviolet-Assisted Atmospheric-Pressure Spatial Atomic Layer Depositions for Tuning ZnO Properties
… When UV-assisted depositions are coupled with N doping, the films are approximately five orders of magnitude more resistive. It is proposed that the UV-light-assisted depositions increase the presence of charged reaction intermediates which sterically hinder the polar (002) facet, thereby …
-
Excited State Dynamics of Dyes Bound to Nanocrystals
… NC surface. Chapter 6 studies the impact of n-doping on electron transfer dynamics in dye-NC systems. Electron transfer from dye molecules used in Chapter 3 to Tin (Sn)-doped Indium oxide (ITO) NCs was studied to examine the impact of doping on electron transfer from dyes to NCs and back …
-
Fabrication and Characterization of a Palladium/Porous Silicon Layer
… irregular and is of no improvement despite the n-doping wafer makeup. Resistivity in well-plated regions was measured to be 7-10 Ωcm, while resistivity in regions not well-plated was measured to be 70-140 Ω cm. This is comparable to previous literature values, indicating n-silicon porous silicon …
-
Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO 3 thin films
… band insulator to metallic conduction by a self-doping with oxygen vacancies which act as shallow donors. A local accumulation or depletion of oxygen vacancies at the vicinity of the surface will lead to a local redox process which is responsible for the resistance change. To study the influence …
-
Elektrischer Transport in GaN- und InN-Nanodrähten
… in dependence of the diameter and the n-doping. With the use of IV-measurements on those MBE grown nanowires with different diameters at dark and under UV illumination as well as the decay of the persistent photocurrent, it was possible to find an for GaN untypical behaviour. The …
-
Electroactive Conjugated Polymers as Charge-Transport Materials for Optoelectronic Thin-Film Devices
… on the other hand it facilitates reversible p-doping of the resultant polymers. Although n-doping of poly-1–poly-3 is possible due to the electron-deficient oxadiazole rings, it causes the continuous degradation of these electron-acceptor units. Interestingly, this process does not influence …
-
Characterization of type-II GaSb quantum rings in GaAs solar cells
… of the location of QR layers and their delta doping within the solar cell is investigated in this work. Devices with 5 layers of delta doped QRs placed in the intrinsic, n and p regions of a GaAs solar cell are experimentally investigated and the deduced values of Jsc, Voc, Fill factor (FF), …