Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 11 of 11 for “"N-doping"”.
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Electrical and Optical Probing of Extremely Large Planar Polymer Light-Emitting Electrochemical Cells
… on the principle of in situ electrochemical doping and the formation of a p-n junction. Compared to conventional polymer light-emitting diodes, LECs possess some favorable device characteristics, making them attractive candidates for flat panel display applications. However, the underlying …
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Application of scalable and inexpensive modification on carbon in clean technologies
… gas detonation process is explored for N-doping via a post-growth thermal annealing process. From the linear sweep voltammetry in O₂-saturated 0.50 M H₂SO₄ solution by rotating disk electrode (RDE), it has been demonstrated that, after N-doping on the carbon, the onset potential of ORR is …
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Nano-Silicon/graphene Composite Anodes For Enhanced Performance Lithium Ion Batteries
… electrochemical mechanisms pertaining to the N-doping effect, Si alloying and conversion reactions. With the resulting balance of enhanced capacity and improved cyclability, this study advances the development of Si-based composite anodes and its charge towards commercialization.</p>
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High-throughput characterisation and device integration of nanomaterials
… oxidising pre-treatments counteract the n-doping of conventional alumina ALD processes. The last chapter applies the results of previous chapters to MoSe2/WSe2 heterostructures. SECM was used to optimise the contrast between MoSe2 and WSe2 and used to identify >1000 heterostructure domains. …
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Formation Mechanisms and Photocatalytic Properties of ZnO-Based Nanomaterials
… the incorporation of Au nanoparticles, N-doping of ZnO, supporting ZnO nanostructures on reduced graphene oxide (RGO), and supporting N-doped ZnO on N-doped RGO. ZnO-based nanostructures were studied systematically through the entire process from synthesis and characterization to their use …
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Carbon Nitride and Conjugated Polymer Composite Materials
… was further evidenced by suppression of the n-doping of the PBT polymer by CNx. Nanoscale atomic force microscopy (AFM) and current-sensing AFM data suggested that CNx may form a bulk heterojunction with PBT. Thermal annealing of nitrogen rich CNx films led to n-type semiconductor materials …
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Ultraviolet-Assisted Atmospheric-Pressure Spatial Atomic Layer Depositions for Tuning ZnO Properties
… When UV-assisted depositions are coupled with N doping, the films are approximately five orders of magnitude more resistive. It is proposed that the UV-light-assisted depositions increase the presence of charged reaction intermediates which sterically hinder the polar (002) facet, thereby …
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Excited State Dynamics of Dyes Bound to Nanocrystals
… NC surface. Chapter 6 studies the impact of n-doping on electron transfer dynamics in dye-NC systems. Electron transfer from dye molecules used in Chapter 3 to Tin (Sn)-doped Indium oxide (ITO) NCs was studied to examine the impact of doping on electron transfer from dyes to NCs and back …
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Fabrication and Characterization of a Palladium/Porous Silicon Layer
… irregular and is of no improvement despite the n-doping wafer makeup. Resistivity in well-plated regions was measured to be 7-10 Ωcm, while resistivity in regions not well-plated was measured to be 70-140 Ω cm. This is comparable to previous literature values, indicating n-silicon porous silicon …
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Electroactive Conjugated Polymers as Charge-Transport Materials for Optoelectronic Thin-Film Devices
… on the other hand it facilitates reversible p-doping of the resultant polymers. Although n-doping of poly-1–poly-3 is possible due to the electron-deficient oxadiazole rings, it causes the continuous degradation of these electron-acceptor units. Interestingly, this process does not influence …
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Characterization of type-II GaSb quantum rings in GaAs solar cells
… of the location of QR layers and their delta doping within the solar cell is investigated in this work. Devices with 5 layers of delta doped QRs placed in the intrinsic, n and p regions of a GaAs solar cell are experimentally investigated and the deduced values of Jsc, Voc, Fill factor (FF), …