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Showing 1 to 6 of 6 for “"Mott-Schottky"”.
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Semiconducting properties of the passive films on copper
… photoresponse and kinetic measurements. Mott-Schottky plots show that the passive films on copper are p-type semiconductors. The metal deficits form the electron acceptors, which give rise to p-type conductivity. The passive films show photovoltages under illumination. The band gaps of …
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Advanced photoanodes for photoassisted water electrolysis
… oxygen partial pressure. The enthalpies of the Schottky defect formation and the reduction reaction for hematite were determined as 13.4 eV and 5.4 eV, respectively. In addition, a temperature independent value for the electron mobility of 0.10 cm2/Vs for 1% Ti donor doped hematite was derived. …
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Urea Pre-treatment of N2-annealed Transition Metal Oxides for Low Cost and Efficient Counter Electrodes in Dye-sensitized Solar Cell
… other characterizations including SEM, EDS, and Mott-Schottky performed for urea pre-treatment of WO3, SnO2 and ZnO support the hypothesis that urea treatment helps create oxygen vacancies (shallow defects states) in metal oxides. These oxygen vacancies facilitate the redox process in the …
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In Situ Studies of Surface Electric Field on Cobalt Oxide Electrode Surfaces with Second Harmonic Generation (SHG)
Cobalt compounds are proven to be efficient electrochemical (EC) catalysts, and the surface electric field may partly explain the efficiency. Surface electric field indicates electron/hole separation, and accumulation in the space charge layer, which can be probed in situ by electric field-induced …
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Surface trap passivation and characterization of lead sulfide quantum dots for optical and electrical applications
… models to be used for further analysis. Mott-Schottky measurements are implemented to measure carrier concentration and mobility to compare PbS core-only and PbS/CdS core/shell QD thin films. Drive-level capacitance profiling is employed to characterize the density and energy level of …
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Electrochemical and Photoelectrochemical Study of Conduction modes in Nanostructured TiO2 Films
… wall of NT is proposed to replace the classical Mott-Schottky relation, which is only valid for a plate condensator. This model allows understanding the variation of the space charge layer as a function of the applied potential. With this new model, a carrier density of about 1018 cm-3 et 1020 …