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Showing 1 to 20 of 90 for “"Monolithic integration"”.

  1. Monolithic integration of semiconductor ring lasers

    … stable single mode operation and potential for integration. However, most of the mode dynamical behavior as well as the optimum device design are still far from a complete understanding. This thesis reports on the design, technological development and characterization of SRLs emitting at 1.55 …

    glasgow Repository record for Monolithic integration of semiconductor ring lasers (opens in a new tab)

  2. Monolithic Integration Of Dual Optical Elements On High Power Semicond

    This dissertation investigates the monolithic integration of dual optical elements on high power semiconductor lasers for emission around 980nm wavelength. In the proposed configuration, light is coupled out of the AlGaAs/GaAs waveguide by a low reflectivity grating coupler towards the substrate …

    ucf

  3. Monolithic integration of etched facet lasers with GaAs VLSI cirucits

    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.

    mit Repository record for Monolithic integration of etched facet lasers with GaAs VLSI cirucits (opens in a new tab)

  4. Phosphide-based optical emitters for monolithic integration with GaAs MESFETs

    Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Civil and Environmental Engineering, 1995.

    mit Repository record for Phosphide-based optical emitters for monolithic integration with GaAs MESFETs (opens in a new tab)

  5. Resonant-cavity-enhanced multispectral infrared photodetectors for monolithic integration on silicon

    … detecting multiple wavebands simultaneously and monolithic integration with Si ROIC, however, enable dramatically simplified system design with superior mechanical robustness, and thus attract a lot of interest around the world today. In this thesis, we focus on the development of novel IR …

    mit Repository record for Resonant-cavity-enhanced multispectral infrared photodetectors for monolithic integration on silicon (opens in a new tab)

  6. Monolithic integration of III-V semiconductor materials and devices with silicon

    Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.

    mit Repository record for Monolithic integration of III-V semiconductor materials and devices with silicon (opens in a new tab)

  7. Monolithic Integration of Fluidics, Electronics, and Photonics using CMOS Foundry Processes

    … of fluorophores. Lastly, capitalizing on this monolithic integration capability, co-design of an integrated nanopore with readout amplifier circuit is performed using multiphysics and circuit simulation tools. With these results, this thesis aims to lay the groundwork for designing and …

    mit Repository record for Monolithic Integration of Fluidics, Electronics, and Photonics using CMOS Foundry Processes (opens in a new tab)

  8. Platform for monolithic integration of III-V devices with Si CMOS technology

    Monolithic integration of III-V compound semiconductors and Si complementary metal-oxide- semiconductor (CMOS) enables the creation of advanced circuits with new functionalities. In order to merge the two technologies, compatible substrate platforms and processing approaches must be developed. The …

    mit Repository record for Platform for monolithic integration of III-V devices with Si CMOS technology (opens in a new tab)

  9. Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology

    … of device-quality GaAs on Si substrates, but monolithic integration of III-V semiconductors with Si CMOS using this platform is hampered by the large thickness of the Si1-xGex graded region. To address this issue, the Silicon on Lattice-engineered Silicon (SOLES) was developed, consisting of a …

    mit Repository record for Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology (opens in a new tab)

  10. Monolithic integration of 1.55 micron photodetectors with GaAs electronics for high speed optical communications

    … For better system performance and lower cost, monolithic optoelectronic integrated circuits (OEICs) are highly desirable. A novel optoelectronic integration technology for high performance OEICs was proposed and partially developed and termed Aligned Pillar Bonding (APB) process. The work began …

    mit Repository record for Monolithic integration of 1.55 micron photodetectors with GaAs electronics for high speed optical communications (opens in a new tab)

  11. Chip scale monolithic integration of inductive and capacitive components by self-rolled-up membrane nanotechnology

    … (C) self-rolled-up membrane (S-RuM) components monolithically into a single L-C network structure, thereby greatly reducing the on-chip area footprint. The individual L-C elements are fabricated in-plane using standard semiconductor processing techniques, and subsequently triggered by the …

    uiuc Repository record for Chip scale monolithic integration of inductive and capacitive components by self-rolled-up membrane nanotechnology (opens in a new tab)

  12. Wafer bonding for monolithic integration of Si CMOS VLSI electronics with III-V optoelectronic devices

    … of Si SOICMOS electronics and the subsequent monolithic integration of high performance optoelectronic devices. Future goals for this work include bonding fully processed SOI-CMOS wafers to the GaAs, rather than silicon wafers containing no electronics. With the successful development of SonG …

    mit Repository record for Wafer bonding for monolithic integration of Si CMOS VLSI electronics with III-V optoelectronic devices (opens in a new tab)

  13. Monolithic Integration of Long Wavelength Photodetectors and High Electron Mobility Transistors on Metamorphic Gallium Arsenide Substrates

    … high electron mobility transistors (HEMTs) were monolithically integrated on metamorphic GaAs substrates for optoelectronic receiver application. By stacking the photodiode layers on top of HEMT layers, the performance of both devices can be optimized separately. The measured performance of both …

    uiuc Repository record for Monolithic Integration of Long Wavelength Photodetectors and High Electron Mobility Transistors on Metamorphic Gallium Arsenide Substrates (opens in a new tab)

  14. Monolithic Integration of Thermally Stable Enhancement-Mode and Depletion-Mode Indium Phosphide HEMTs Utilizing Iridium-Gate and Silver-Ohmic Contact Techniques

    … layer structure and the doping concentration, monolithic integration of depletion-mode and enhancement-mode InAlAs/InGaAs/InP HEMTs were realized through the newly developed fabrication process based on Ge/Ag/Ni-ohmic and Ir-gate contact technologies, which are highly applicable to high speed …

    uiuc Repository record for Monolithic Integration of Thermally Stable Enhancement-Mode and Depletion-Mode Indium Phosphide HEMTs Utilizing Iridium-Gate and Silver-Ohmic Contact Techniques (opens in a new tab)

  15. The Monolithic Integration of Enhancement- and Depletion-Mode High Electron Mobility Transistors for Low-Power and High-Speed Circuit Applications in the Lattice -Matched Indium Phosphide Material System

    … a heterostructure was then designed for the monolithic integration of E-HEMTs and D-HEMTs, using a two-level etch-stop process. Devices were successfully fabricated and characterized which showed the viability of a directcoupled FET logic (DCFL) circuit technology in the InP material system. …

    uiuc Repository record for The Monolithic Integration of Enhancement- and Depletion-Mode High Electron Mobility Transistors for Low-Power and High-Speed Circuit Applications in the Lattice -Matched Indium Phosphide Material System (opens in a new tab)

  16. Next generation optical receivers : integration and new materials platform

    … cost and performance demands of future market. Monolithic integration and new material systems are potential solutions and have been the focus of research investigation. This thesis summarizes the research progress of monolithic integration on InP, and the achievements in realizing 1.55[micro]m …

    mit Repository record for Next generation optical receivers : integration and new materials platform (opens in a new tab)

  17. Modeling and Design of a Monolithic High Frequency Synchronous Buck with Fast Transient Response

    … should be all implemented on a single chip, i.e. monolithic integration. Comparing with discrete switching DC-DC converter, monolithic integration brings a number of benefits and new design challenges. Besides monolithic integration, high switching frequency is another trend for power management …

    vt Repository record for Modeling and Design of a Monolithic High Frequency Synchronous Buck with Fast Transient Response (opens in a new tab)

  18. The integration of InP /InGaAsP ridge waveguide structures with dielectric waveguides on silicon

    … technologies that could be enabled by the monolithic integration of III-V optoelectronic devices on a silicon integrated circuit. Two significant capabilities required to achieve this monolithic integration were addressed: the assembly of III-V device structures on silicon and the …

    mit Repository record for The integration of InP /InGaAsP ridge waveguide structures with dielectric waveguides on silicon (opens in a new tab)

  19. MOS-bipolar composite power switching devices

    … frequency power inverter circuits are discussed. Monolithic integration of the two composite devices are also proposed.

    vt Repository record for MOS-bipolar composite power switching devices (opens in a new tab)

  20. Stabilization techniques and silicon-germanium saturable absorbers for high repetition rate mode-locked lasers

    The monolithic integration of passively mode-locked solid-state lasers at highest repetition rates has been prevented by Q-switching instabilities and the lack of integrable saturable absorbers to date. In this thesis we demonstrate in theory and experiment that active feedback electronics …

    mit Repository record for Stabilization techniques and silicon-germanium saturable absorbers for high repetition rate mode-locked lasers (opens in a new tab)

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