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Showing 1 to 15 of 15 for “"Monolayer MoS2"”.

  1. Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2

    … and 2-dimensional (2-D) molybdenum disulfide (MoS2) have received tremendous attention over the past few decades. Numerous applications have been proposed such as nanowire MOSFETs, nanowire electrical generators, nanowire biosensors, nanowire single photon detectors, MoS2 transistors, and MoS2

    uiuc Repository record for Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2 (opens in a new tab)

  2. Tip-based nanolithography and application to molybdenum disulfide devices

    … and the application of TBN to fabricate MoS2 devices. The main contributions of this work are (i) understanding the effects of polymer properties and polymer melt flow on the size and shape of polymer nanostructures deposited from a heated tip, (ii) fabricating monolayer MoS2 nanoribbon …

    uiuc Repository record for Tip-based nanolithography and application to molybdenum disulfide devices (opens in a new tab)

  3. Experimental studies of heat transport across material interfaces at the nano and micro scales

    … a two dimensional (2D) material such as MoS2 and micron scale particles. We used frequency domain thermoreflectance (FDTR) to conduct all thermal property measurements. This technique can measure thin film thermal properties as well as characterize the interface between two materials. …

    bu Repository record for Experimental studies of heat transport across material interfaces at the nano and micro scales (opens in a new tab)

  4. DESCRIPTION OF POLARONS IN LAYERED TRANSITION METAL OXIDES USING THE r2SCAN DENSITY FUNCTIONAL WITH FULLY NONLOCAL CORRECTIONS AND EFFECT OF STRAIN ON THE BAND GAP OF MONOLAYER MOLYBDENUM DISULFIDE

    … using standard U values, and even for U=Ud=0. Monolayer MoS2 exhibits intriguing properties and potential technological applications when subjected to strain. A recent experimental study reported that the bandgap of monolayer MoS2 on a mildly curved graphite surface decreases by 400 meV/% …

    temple Repository record for DESCRIPTION OF POLARONS IN LAYERED TRANSITION METAL OXIDES USING THE r2SCAN DENSITY FUNCTIONAL WITH FULLY NONLOCAL CORRECTIONS AND EFFECT OF STRAIN ON THE BAND GAP OF MONOLAYER MOLYBDENUM DISULFIDE (opens in a new tab)

  5. Manipulation of Light-Matter Interaction in Two-Dimensional Systems via Localized Surface Plasmons

    … of bowtie-coupled emitter was also applied to monolayer MoS2, a transition metal dichalcogenide semiconductor which transforms to a direct bandgap semiconductor in monolayer. Silver bowtie array coupled with monolayer of MoS2 showed a high enhancement in emission (Raman and PL) due to …

    penn Repository record for Manipulation of Light-Matter Interaction in Two-Dimensional Systems via Localized Surface Plasmons (opens in a new tab)

  6. Optical properties of two-dimensional transition metal dichalcogenides

    … TMDs, especially when thinned down to a monolayer. As a result, the exciton-related phenomena are prominent in TMD monolayers, which distinguish the monolayers significantly from their bulk counterparts. This thesis systematically studies the optical properties in semiconducting, …

    mit Repository record for Optical properties of two-dimensional transition metal dichalcogenides (opens in a new tab)

  7. Tunable emission from two-dimensional semiconductor with platelet optical antennas

    … in electronic and optoelectronic area. Monolayer transition metal dichalcogenides (TMDC), such as MoS2 , are direct bandgap semiconductors which hold promises in valley-based optoelectronic applications or light-emitting devices. However, the weak light-matter interaction in this …

    mit Repository record for Tunable emission from two-dimensional semiconductor with platelet optical antennas (opens in a new tab)

  8. Infrared Energy Conversion in Plasmonic Fields at Two-Dimensional Semiconductors

    … and molybdenum- or tungsten-disulfide (MoS2; WS2) monolayers were examined by parallel synthesis of (i) DDA electrodynamic simulations and (ii) near-field electron energy loss (EELS) and far-field optical transmission UV-vis spectroscopic measurements. Susceptibility to second-order …

    arkansas Repository record for Infrared Energy Conversion in Plasmonic Fields at Two-Dimensional Semiconductors (opens in a new tab)

  9. Electronic device fabrication and characterization based on two-dimensional materials

    … thesis, the optical and electrical properties of MoS2/WS2 heterostructures grown by chemical vapor deposition (CVD) are studied. By using Raman spectra, photoluminescence (PL) spectra and atomic force microscopy (AFM), the vertical and lateral MoS2/WS2 structures are identified. The transistors …

    uiuc Repository record for Electronic device fabrication and characterization based on two-dimensional materials (opens in a new tab)

  10. Ab initio study of nonlinear and vibrationally-controlled optoelectronic responses in semiconductors

    … method to better understand the photoresponse of monolayer MoS2. Then, we discuss two potential mechanisms that could contribute to the BPVE. While these mechanisms have been discussed in model systems, it is difficult to determine their relevance in real materials. We outline new methods for …

    penn Repository record for Ab initio study of nonlinear and vibrationally-controlled optoelectronic responses in semiconductors (opens in a new tab)

  11. Electronic devices based on semiconducting transition metal dichalcogenides

    … The electrical properties of CVD synthesized monolayer MoS2 and WSe2 are investigated. The mobilities are extracted from back gate transistors, where the contact resistance is excluded with 4-point measurement for MoS2, and the histogram of mobilities is summarized for WSe2. Three different …

    uiuc Repository record for Electronic devices based on semiconducting transition metal dichalcogenides (opens in a new tab)

  12. Strong-field Phenomena in Low-dimensional Materials at Terahertz Frequencies

    … Franz-Keldysh effect on exciton resonance in monolayer MoS2 under THz fields. We have demonstrated a metastable topological phase transition in 2D MoTe2, driven by THz-liberated carriers assisted with coherent phonon excitations. Further single-shot measurements reveal evidence of an …

    mit Repository record for Strong-field Phenomena in Low-dimensional Materials at Terahertz Frequencies (opens in a new tab)

  13. Understanding and engineering electronic and optoelectronic properties of 2D materials and their interfaces

    … behavior at the nanoscale junction of metal-MoS2 and dependence on the layer number (thickness), (2) realization of voltage selectable photodiodes based on a lateral in-plane MoS2-WSe2 heterojunctions, and (3) interfacial properties and (opto)electronic characteristics of a phosphorene-MoS2

    mit Repository record for Understanding and engineering electronic and optoelectronic properties of 2D materials and their interfaces (opens in a new tab)

  14. MoS2 on Gold: achieving extremely high exfoliation yield and optical contrast for Van der Waals monolayers

    … Waals (VdWs) materials. Molybdenum disulphide (MoS2) on gold (Au) is investigated in detail as it provides an extremely large exfoliation yield and a high optical contrast. These techniques are further explored with other VdWs and substrate materials. Further experimental work in electrically …

    qu-belfast Repository record for MoS2 on Gold: achieving extremely high exfoliation yield and optical contrast for Van der Waals monolayers (opens in a new tab)

  15. AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework

    … number of impurities, vacancies, and adatoms in monolayer MoS2, including groups III and IV dopants, as well as magnetic transition metal atoms such as Mn, Fe, Co, V, Nb, and Ta. By using DFT over a 5x5 atomic cell, we identify the most promising element candidates for p-doping of MoS2. …

    uiuc Repository record for AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework (opens in a new tab)