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Showing 1 to 20 of 326 for “"Molecular Beam"”.
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Silicon molecular beam epitaxy
… doping of Si-MBE layers prepared in a commercial molecular beam growth system and in the evaluation of their electrical and crystallographic properties. A number of technological problems associated with flux monitoring, the flaking of excess Si deposits and the use of closed-cycle He cryopumps …
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Molecular Beam Epitaxy: A Thermomechanical Treatment
We perform a linear stability analysis, and consider the dependence of the growth rate of instability on the wave number. This dispersion relation is a function of many parameters that describe the elasticity and chemistry of the film and substrate. The analysis permits us to recover the classical …
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Chemical beam, gas-source molecular beam, and molecular beam epitaxial growth of III/V compound semiconductor materials
… growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new growth chamber, p-type GaAs of higher …
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Studies and Applications of Molecular Beam Epitaxy
Submitted by Jenny Wong-Welch (wongwel2@illinois.edu) on 2011-11-10T23:23:49Z No. of bitstreams: 1 1992_matheny.pdf: 3841756 bytes, checksum: 8d6b8afce27924420d869f3236163bec (MD5)
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Studies and applications of molecular beam epitaxy
… of surface steps on nucleation and growth in molecular beam epitaxy (MBE). Studies of the critical temperature between two-dimensional and three-dimensional growth are completed by means of reflection high energy diffraction. These critical temperatures are observed to depend on the density of …
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Modeling of gallium nitride molecular beam epitaxy growth
… sound surface processes to investigate the molecular beam epitaxy growth of GaN using ammonia and ECR plasma source. A surface riding layer of Ga and ammonia or N plasma species are included in the model. The surface riding species are allowed to undergo several physical and chemical …
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Molecular beam study of polyatomic free radical reactions.
Massachusetts Institute of Technology. Dept. of Chemistry. Thesis. 1972. Ph.D.
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Molecular beam studies of van der Waals molecules.
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 1972
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Molecular beam studies of excitation and electron transfer reactions
Two studies were performed using crossed molecular beams. The first system studied was the reaction $\rm Na\sp* + KBr \to NaBr + K\sp*,$ determining how fine structure is transmitted through a reactive collision. Each fine structure state of Na$\sp*(3\sp2$P) is separately laser excited, and the …
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Molecular Beam Epitaxy Synthesis and Characterization of Indium Selenide Films
… substrate choice, and Se/In flux ratio during molecular beam epitaxy synthesis on the phase composition, surface morphology and stoichiometry of indium selenide films was investigated. Higher substrate temperature combined with higher Se/In ratio promoted formation of β-In2Se3 over γ and/or …
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III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy
… successfully by many growth methods. Among them, molecular beam epitaxy (MBE) is a promising epitaxial growth method owing to precise control of growth parameters, which significantly affect the film properties, composition, and thickness. However, the understanding of growth mechanism of …
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Growth of Indium Nitride Quantum Dots by Molecular Beam Epitaxy
… by which InN quantum dots (QDs) form through molecular beam epitaxy (MBE) growth in Nitrogen-Rich and Metal-Rich growth environments. </p> <p>Structural characterization was performed using Atomic Force Microscopy. Statistical analysis was performed on both growth environments, Metal-Rich and …
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Self-Assembled Barium Titanate Nanoscale Films by Molecular Beam Epitaxy
… the growth of barium titanate (BaTiO3) by molecular beam epitaxy has relied on a growth technique called shuttered RHEED. Shuttered RHEED controls the stoichiometry of barium titanate through the precise deposition of alternating layers of BaO and TiO2. While this approach has achieved 1% …
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Fabry-Perot Cavity, Pulsed Fourier Transform Molecular Beam Microwave Spectroscopy
… of the theory of a Fabry-Perot cavity, of molecular polarization and of molecular beams is presented as it relates to this spectrometer. The block diagram is presented that shows how these techniques are incorporated into a working system. Certain design considerations relevant to the …
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Superconductivity in oxygen doped iron telluride by molecular beam epitaxy
… the growth recipe of thin film iron telluride by Molecular Beam Epitaxy (MBE). We found the growth to be self-regulated, similar to that of GaAs. The initial layers of growth seem to experience a spontaneous crystallization, as the film quickly go from the initial polycrystalline phase to highly …
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An investigation of heterojunction bipolar transistors by molecular beam epitaxy
Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and …
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Hyperthermal molecular beam dry etching of III-V compound semiconductors
Includes bibliographical references (p. 181-186).
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High Quality ZnO Epitaxial Grown By Plasma Assisted Molecular Beam Epitaxy
… substrates respectively, using plasma assisted molecular beam epitaxy (MBE) . Various growth conditions, such as growth temperature, II/VI ratio, and buffer layers, were employed to optimize the quality of the ZnO film. The subsequent characterization of the films was carried out to evaluate the …
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Studies of InAs and GaAs layers prepared by molecular beam epitaxy
… thin films of GaAs and InAs by the technique of molecular beam epitaxy (MBE). One micron thick unintentionally doped films of InAs were deposited onto GaAs substrates at the relatively low growth temperature of 370°C and GaAs films were grown over the range 400 - 650°C. A detailed study of the …
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