Global ETD Search
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Showing 1 to 9 of 9 for “"MoTe2"”.
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Ultrafast Charge and Energy transfer Dynamics in Organic-Transition Metal Dichalcogenides Heterostructures
… Transition Metal Dichalcogenide, monolayer MoTe2 is characterized. Key excitonic properties such as exciton saturation, lifetime, Exciton-Exciton Annihilation rate and its complex spectral evolution arising from many body effects at both the electronic and optical gap as a function of …
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Electronic devices based on semiconducting transition metal dichalcogenides
… device structures based on exfoliated few-layer MoTe2 are proposed and fabricated: back gate transistor, suspended transistor, and double gate transistor. The contrast-thickness correlation and Raman spectra of few-layer MoTe2 are obtained. Room-temperature ohmic contact and low electron barrier …
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Phase-Engineered Field-Effect Transistors Based on Two-Dimensional Transition Metal Dichalcogenides
… 2H and metallic 1T’ phases, lateral 2H/1T’ MoTe2 homojunctions can be synthesized in situ by flux-controlled phase engineering. In this dissertation, a comprehensive study combining detailed structural and electrical properties of in-situ-grown lateral MoTe2 homojunctions formed via the …
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COMPOSITION AND PRESSURE DEPENDENT STUDY ON WEYL SEMIMETAL Mo1-xWxTe2
… using the self-flux method (for parent compounds MoTe2 and WTe2) and the chemical vapor transport method (for doped compounds). The single crystals were then characterized by energy- dispersive X-ray spectroscopy and X-ray diffraction (XRD). Temperature-dependent resistivity measurements at …
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An Experimental Study Of Atomic Scale Friction And Adhesion For 2d And Layered Materials: The Effects Of Interfacial Contact, Compliance, And Commensurability
… such that the friction force follows MoS2>MoSe2>MoTe2. An increase in chalcogen size increases the lattice spacing, creating a wider pathway that allows the tip to detour around high energy sites and thus lower friction. Finally, the friction force on MoS2 shows two behaviors—a strong enhancement …
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Strong-field Phenomena in Low-dimensional Materials at Terahertz Frequencies
… a metastable topological phase transition in 2D MoTe2, driven by THz-liberated carriers assisted with coherent phonon excitations. Further single-shot measurements reveal evidence of an intermediate phase. For QDs, we have demonstrated THz-driven reemergence of quenched photoluminescence in QDs …
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Achieving wafer scale synthesis of molybdenum ditelluride through precursor engineering
Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2023-09-01 without embargo terms
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Expanding electronics beyond silicon with wide-bandgap, 2D, and ferroelectric materials
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01