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Showing 1 to 17 of 17 for “"Mg doped"”.
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CMZP and Mg-doped Al2TiO5 Thin film Coatings for High Temperature Corrosion Protection of Si3N4 Heat Exchangers
… zirconium phosphate (CMZP) and magnesium doped aluminum titanate (Mg-doped Al2TiO5) were successfully deposited on Si3N4 using the sol-gel and dip-coating technique. Coated and uncoated samples were then exposed to a sodium containing atmosphere at 1000*C for 360 hours to simulate typical …
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Alkali/steam corrosion resistance of commercial SiC products coated with sol-gel deposited Mg-doped Al₂TiO₅ and CMZP
… available SiC filter materials coated with Mg-doped Al₂ TiO₅ and (Ca <sub>0.6</sub>.6' Mg<sub>0.52</sub>) Zr₄P₆O₂₄ (CMZP) was investigated in high-temperature high pressure (HTHP) alkali-steam environments. Coated specimen properties, including cold and hot compressive strengths, bulk …
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Growth Kinetics of GaN and Effects of Flux Ratio and Growth Temperature on Properties of Undoped and Mg-Doped GaN Films Grown by PAMBE
Mg-doped GaN films grown at different temperatures are investigated. It is found that the growth conditions to achieve p-type films are closely related to those for undoped films since p-type conductivity is obtained only after a complete compensation of the background carriers. By supplying a high …
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Magnesium doped hydroxyapatite/sodium alginate biocomposite for bone implants application
Magnesium-doped Hydroxyapatite/Sodium alginate was successfully prepared by using precipitation method and this research was implement to enhance the physical, mechanical and biological properties of HA/SA. The properties of this materials are attributed to more cost-efficient, eco-friendly and …
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Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization
… with electrical results. For the growth of Mg-doped GaN films, larger ammonia flow rates produced electrically better films. This phenomenon has been accounted for by using a simple Ga vacancy model. Also by carrying out secondary ion mass spectroscopy (SIMS) study for the Mg-doped films, …
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Electron Injection-induced Effects In Iii-nitrides: Physics And Applications
… length was studied at various temperatures in Mg-doped p-GaN, p-Al[subscript x]Ga[subscript 1-x]N, and p-Al[subscript x]Ga[subscript 1-x] N/GaN superlattices. It was found that Lsubscript n] experienced a multi-fold linear increase and that the rate of change of L[subscript n] decreased …
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Calcium Phosphate Powders for Biomedical Applications: Synthesis, Thermal Behavior and Non-Conventional Sintering
… flash sintering techniques. In the first part, Mg-doped (0 - 2 mol% Mg2+) tricalcium phosphate powders with micrometric size were produced by solid state reaction, and the influence of dopant on their sintering behavior and, specifically, on the β→α phase transition was studied. It was shown …
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Epitaxial growth and characterization of hexagonal boron nitride for deep UV applications
… irradiation with a thermal neutron beam. Mg doped hBN epilayers were also grown on highly insulating AlN and n-type AlGaN templates with an attempt to demonstrate hBN/AlGaN p-n junctions. The current-voltage (I-V) characteristics of hBN/6H-SiC heterostructures were measured and the results …
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Tailoring Li₄Ti₅O₁₂ Thin Film Carrier Kinetics Through Solid Solution Doping for Battery and Memristor Applications
… investigate solid solution dopants (Nb⁵⁺, V⁵⁺, Mg²⁺, Cu²⁺) and their effects on LTO4 thin-film kinetics and performance in batteries and memristors. Films doped with Mg, Cu, Nb, and V with a 0.2M dopant concentration were deposited on Nbdoped SrTiO₂ substrates. Cyclic voltammetry and impedance …
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Probing Nanoscale Functional Properties of Perovskite and Wurtzite Ferroelectrics via Scanning Probe Microscopy
… individual nanocrystallites within thin films of Mg-doped zinc oxide (MZO) with a polar wurtzite crystal structure is demonstrated. Through various SPM techniques, voltage control of the polarization and coupled electronic transport behavior is unveiled with an adjustable effective longitudinal …
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STUDY OF WURTZITE AND ZINCBLENDE GAN BASED GREEN LED HETEROSTRUCTURE
… emission of 2.58 – 2.82 eV were observed in a Si doped layer, a Mg doped layer and QW layers, respectively. Low-energy QW emission peaks were also found in large wurtzite inclusions, which have been identified by in-depth correlated STEM and CL characterisation. The understanding given by this …
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Electrical characterisation of defects in wide bandgap semiconductors.
… contrast, a defect level found in a more highly doped film, with an activation energy of -0.37 eV, exhibited behaviour characteristic of an isolated point defect, which we attribute to B-related centres in the bulk diamond, away from the dislocations.The second part of this thesis presents …
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Electronic Transport in Highly Mismatched InAs Films on GaAs
Electrical properties of Si- and Mg-doped InAs epitaxial layers grown by MOCVD were studied by performing magneto-transport measurements at different temperatures, from 300 K down to 1.2 K. The longitudinal magnetoresistance and Hall effect indicate a three-band system existing in n-type (p-type) …
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Micro- and nano-soft lithography for the fabrication of photonic devices
… to a CHF3 plasma treatment deactivated the Mg doped GaN which was not protected by the photoresist; LEDs with 3 μm diameter at full-width half-maximum were fabricated in this manner. Utilising dip-pen nanolithography for negative patterning allows for grating structures to be created via the …
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Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
… voltage. This is achieved by the insertion of a Mg-doped GaN layer above the AlGaN/GaN heterostructure that is contacted by a Schottky metal. In this manner, the gate stack under positive gate bias features a back-to-back diode configuration with the reverse biased gate-metal/p-GaN Schottky diode …
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Nanoscale electrical characterisation of nitride structures
… of growth condition, such as an increase in Mg doping or a decrease in growth temperature and gas flows, despite the formation mechanism is still unclear. GaN$_{1-x}$As$_x$ is a highly mismatched alloy semiconductor whose band-gap can be engineered across the whole visible spectrum. For this …
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Structural and electrical characterisation of some ABO₃ perovskites
… = 0-0.2) and LaGa₁₋yMyO₃₋δ (y = 0-0.2, M = Cr, Mg). XRD of La₁₋ₓSrₓGaO₃₋δ (x = 0-0.2) showed the secondary phase of SrGa₃O₇ at >5 mol% Sr. The cell deformed with increasing Sr dopant concentration. In the XRD patterns of LaGa₁₋yCryO₃₋δ (y = 0-0.2) the cell also deformed with increasing Cr dopant …