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Showing 1 to 3 of 3 for “"Metalorganic vapour phase epitaxy (MOVPE)"”.
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Surface dynamics in III-V epitaxy and its device implications
Metalorganic vapour phase epitaxy (MOVPE) is a well-established, industry-compatible, compound semiconductor crystal growth technique, allowing for efficient and controllable material deposition. A wide range of semiconductor devices, both from III-V and nitrides families, are commonly fabricated …
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Investigation on the Properties of Nanowire Structures and Hillocks of Group-III Nitride Materials
… axial heterostructure grown by molecular beam epitaxy (MBE); GaN/InGaN core-shell nanowires fabricated by a hybrid approach combining metalorganic vapour phase epitaxy (MOVPE) and dry etching techniques; and AlGaN nanowires on free standing AlGaN substrates fabricated by MBE and inductively …
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Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control
Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed …