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Showing 1 to 4 of 4 for “"Metalorganic vapour phase epitaxy (MOVPE)"”.
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Surface dynamics in III-V epitaxy and its device implications
Metalorganic vapour phase epitaxy (MOVPE) is a well-established, industry-compatible, compound semiconductor crystal growth technique, allowing for efficient and controllable material deposition. A wide range of semiconductor devices, both from III-V and nitrides families, are commonly fabricated …
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Growth and properties of compound semiconductors on germanium substrate
… The epitaxial growth is performed using metalorganic vapour phase epitaxy (MOVPE) technique. The nucleation of zinc blende lattice compound semiconductors on the surface of diamond lattice Ge are highly affected by different growth conditions such as temperature, growth rate and partial …
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Investigation on the Properties of Nanowire Structures and Hillocks of Group-III Nitride Materials
… axial heterostructure grown by molecular beam epitaxy (MBE); GaN/InGaN core-shell nanowires fabricated by a hybrid approach combining metalorganic vapour phase epitaxy (MOVPE) and dry etching techniques; and AlGaN nanowires on free standing AlGaN substrates fabricated by MBE and inductively …
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Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control
Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed …