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Showing 1 to 4 of 4 for “"Metallic filaments"”.
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Resistive switching in electrochemical metallization memory cells
… is defined by the growth and dissolution of a metallic filament. In this study, resistive switching due to filament formation in Ag-Ge-Se- and Cu-SiO2-based memory devices was investigated. Sputter processes for the thin film deposition of Ge0.3Se0.7 and SiO2 were developed and optimized. The …
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Methods for the direct simulation of nanoscale film breakup and contact angles
… involve the deposition of nanoscale flat metallic structures onto a surface with unprecedented precision, the almost instantaneous liquefaction of which leads to new initial liquid configurations which have been previously impossible to achieve in an experimental setup. The mechanisms that …
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Non-volatile organic memory devices: from design to applications
… mechanisms in terms of formation and rupture of metallic filaments inside the organic layer assisted by the metal NPs. The obtained performances are the best reported so far in literature, and, to our knowledge, the statistics analysis is the largest ever reported for organic-based resistive …