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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 21 for “"Metal-semiconductor-metal"”.
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Surface plasmons for enhanced metal-semiconductor-metal photodetectors
… a photon couples to the free electron gas of the metal at the interface between a metal and a dielectric. The extraordinary properties of SPP allow for sub-diffraction limit waveguiding and localized field enhancement. The emerging field of surface plasmonics has applied SPP coupling to a number …
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Metal-semiconductor-metal photodetectors for optoelectric receiver applications
Restriction data tranferred 2014-07-01T11:20:26-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission
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Performance tradeoffs in scaling InAlAs/InGaAs/InP metal-semiconductor-metal (MSM) photodetectors
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
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High-Speed and High-Sensitivity Metal-Semiconductor-Metal Photodetectors for Optoelectronic Integrated Circuit Applications
A variety of techniques to enhance the sensitivity and bandwidth of front-illuminated MSMPDs is presented, proposed, and demonstrated. A reduction in the absorption layer thickness of a conventional InGaAs-based MSMPD enabled bandwidths in excess of 19 GHz, at a wavelength of 1.55 $\mu$m, to be …
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Optical Enhancement in Periodic Plasmonic Gratings for SERS and Metal-Semiconductor-Metal Photodetectors (MSM-PDs) Applications
… grating electrodes on the efficiency of metal-semiconductor-metal photodetectors (MSM PDs) and the sensitivity of Surface Enhanced Raman Spectroscopy (SERS). This research can benefit many areas of nanoscience and optics, including plasmonic applications, such as, super lenses, nano-scale …
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Development of photochemical etching and its application in fabrication of integrated reflector metal semiconductor metal photodetectors
… step. It is based on light-assisted etching of semiconductors placed in a suitable chemical solution. By projecting spatially varying intensity light, grayscale etching can be achieved. The thesis begins with the motivation and literature review of this area of study, and then discusses the …
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Perylene Diimide Molecular Glass: Investigations of Charge Transport
A new glass-forming organic semiconductor material was synthesized using a known electron transport material, perylene diimide, and attaching it to a molecular glass in order to allow the material to be solution processed. Devices were made using a simple metal-semiconductor-metal structure and …
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A modulation-doped field-effect transistor-based optoelectronic integrated circuit receiver for optical interconnects
… field-effect transistors (MODFETs) and a metal-semiconductor-metal photodetector (MSM-PD). Extensive discrete electronic and photonic device results are presented and related to receiver design. The performance of the overall receiver and individual circuit elements is reported and …
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Optimization of charge collection efficiency in MSM photodetector
… unit area of gratings in the active region of a metal semiconductor metal photo-detector have been analyzed for enhanced charge collection through electromagnetic field analysis. Plots of the electric field amplitude as it propagates from the constricted grating region to a larger crosssection in …
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Desarrollo y caracterización de fotodetectores de radiación ultravioleta basados en nitruros del grupo III
… de epitaxia en fase vapor con precursores metalorgánicos. En primer lugar, se analizan las principales propiedades de los nitruros del grupo III ylos parámetros más importantes que caracterizan el comportamiento de los fotodetectores de semiconductor. Posteriormente, se detallan los …
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Epitaxial growth and characterization of hexagonal boron nitride for deep UV applications
… of high quality hexagonal boron nitride (hBN) by metal organic chemical vapor deposition (MOCVD). Growth of wafer scale hBN and the ability of electrical conductivity control in this exciting semiconductor are demonstrated. The structural and optical properties of hBN epilayers were characterized …
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A superconducting bandpass delta-sigma modulator for direct analog-to-digital conversion of microwave radio
… are delivered via optical fiber to an on-chip metal-semiconductor-metal (MSM) photodiode, whose output current pulses trigger the Josephson circuitry. In the second approach, the superconducting modulator is clocked by an on-chip Josephson oscillator.
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Metal oxide heterostructured films with controlled architecture for enhanced photocatalytic properties
… the surface and interfacial properties of semiconductor/semiconductor (p-n type, NiO/ZnO) and metal/semiconductor (metal/n- type, RuO2/ZnO) heterostructures using systematic (step-by-step) interface studies, in order to gain knowledge regarding the influence of ZnO surface cleaning in the …
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Germanium photodetectors on amorphous substrates for electronic-photonic integration
… and energy efficiency bottlenecks of standard metal interconnects. Integration of photonics in the back-end-of-line (BEOL) of a standard CMOS process enables the advantages of optical interconnects while benefiting from the low cost of monolithic integration. However, processing in the BEOL …
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Fabrication and Optoelectronic Characterization of Nanoscale Resonance Structures
… fabricated on semiconducting substrates forming metal-semiconductor-metal photodiodes. The spectral response of the nanoscale resonance photodiode was determined by measuring the photocurrent or photovoltage resulting from incident monochromatic light which was swept through wavelengths from 400 …
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Contribución al desarrollo y caracterización de fotodetectores avanzados basados en nitruros del grupo III
… ha podido comprobar que el silicio, el material semiconductor más extendido en la actualidad, sufre una severa degradación de sus características en alta temperatura, debido a su gap relativamente estrecho. Los nitruros, sin embargo, al ser materiales de gap ancho, tienen mejores características …
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Novel nanolasers, nano-LEDs, and modal cutoff confinement light emitters
Semiconductor metal nanocavity lasers and light emitting diodes together with novel modal cutoff confinement light emitters are investigated for optical interconnection application in future dense photonic integrated circuits. Several different cavity structures are designed, processed, and …
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Zinc Oxide Nanorod Based Ultraviolet Detectors with Wheatstone Bridge Design
… research work, for the first time, investigated metal semiconductor-metal (MSM) zine oxide (ZnO) nanorod based ultra-violet (UV) detectors having a Wheatstone bridge design with a high</p> <p>responsivity at room temperature and above, as well as a responsivity that was largely independent of the …
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Charakterisierung und Optimierung von (Al, Ga)N-basierten UV-Photodetektoren
… on the electro-optic properties of AlGaN-based metal-semiconductor-metal photodetectors (MSM PD) was investigated. The focus was on the realization of Schottky-type MSM PD suitable for photodetection below wavelengths of 300 nm with a high external quantum efficiency (EQE). First, experimental …
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