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Showing 1 to 5 of 5 for “"Metal-semiconductor field effect transistor (MESFET)"”.

  1. Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device

    The development of microwave Gallium Arsenide Metal Semiconductor Field Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular phones, and other electronic devices. With these MESFET devices comes the need to model them. This thesis extracts a small signal equivalent …

    vt Repository record for Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device (opens in a new tab)

  2. Radio frequency power amplifiers for portable communication systems

    … unified and concise format. The Bipolar Junction Transistor (BJT) and Metal-Semiconductor Field Effect Transistor (MESFET) are evaluated as active devices in high-efficiency RF PA designs. Two amplifier classes (class CE and class F) meet the system requirements of an 850 MHz operating frequency, …

    vt Repository record for Radio frequency power amplifiers for portable communication systems (opens in a new tab)

  3. Design and Characterization of Fully Monolithic Millimeter -Wave Oscillators

    … achieved with a low-cost technology such as GaAs metal-semiconductor field effect transistor (MESFET). The results highlight the inextricable linkage of phase noise to both device parameters and circuit design methodology. The prediction of phase noise is accomplished through modeling of …

    uiuc Repository record for Design and Characterization of Fully Monolithic Millimeter -Wave Oscillators (opens in a new tab)

  4. Systematic Optimization Technique for MESFET Modeling

    Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devices are essential in all modern microwave and millimeter wave applications. Those models are used for robust designs and fabrication development. The sophistication of modern communication systems …

    vt Repository record for Systematic Optimization Technique for MESFET Modeling (opens in a new tab)

  5. Growth and application of planar III-V semiconductor nanowires grown with MOCVD

    The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application in photonics and electronics. The flexible bottom-up approach to nanowire growth allows for straightforward fabrication of complex 1D nanostructures …

    uiuc Repository record for Growth and application of planar III-V semiconductor nanowires grown with MOCVD (opens in a new tab)